| 000 -LEADER |
|---|
| fixed length control field |
07097nam a22007571i 4500 |
| 001 - CONTROL NUMBER |
|---|
| control field |
8411421 |
| 003 - CONTROL NUMBER IDENTIFIER |
|---|
| control field |
IEEE |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
|---|
| control field |
20200413152926.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS |
|---|
| fixed length control field |
m eo d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
|---|
| fixed length control field |
cr cn |||m|||a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
180801s2018 caua foab 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781681733869 |
| Qualifying information |
ebook |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| Canceled/invalid ISBN |
9781681733876 |
| Qualifying information |
hardcover |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| Canceled/invalid ISBN |
9781681733852 |
| Qualifying information |
paperback |
| 024 7# - OTHER STANDARD IDENTIFIER |
|---|
| Standard number or code |
10.2200/S00858ED1V01Y201805EET010 |
| Source of number or code |
doi |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(CaBNVSL)swl000408591 |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(OCoLC)1047603338 |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
CaBNVSL |
| Language of cataloging |
eng |
| Description conventions |
rda |
| Transcribing agency |
CaBNVSL |
| Modifying agency |
CaBNVSL |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
|---|
| Classification number |
TP482 |
| Item number |
.A834 2018 |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
|---|
| Classification number |
621.59 |
| Edition number |
23 |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Ashraf, Nabil Shovon, |
| Dates associated with a name |
1974-, |
| Relator term |
author. |
| 245 10 - TITLE STATEMENT |
|---|
| Title |
Low substrate temperature modeling outlook of scaled n-MOSFET / |
| Statement of responsibility, etc. |
Nabil Shovon Ashraf. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
|---|
| Place of production, publication, distribution, manufacture |
[San Rafael, California] : |
| Name of producer, publisher, distributor, manufacturer |
Morgan & Claypool, |
| Date of production, publication, distribution, manufacture, or copyright notice |
2018. |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 PDF (xi, 77 pages) : |
| Other physical details |
illustrations. |
| 336 ## - CONTENT TYPE |
|---|
| Content type term |
text |
| Source |
rdacontent |
| 337 ## - MEDIA TYPE |
|---|
| Media type term |
electronic |
| Source |
isbdmedia |
| 338 ## - CARRIER TYPE |
|---|
| Carrier type term |
online resource |
| Source |
rdacarrier |
| 490 1# - SERIES STATEMENT |
|---|
| Series statement |
Synthesis lectures on emerging engineering technologies, |
| International Standard Serial Number |
2381-1439 ; |
| Volume/sequential designation |
# 10 |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
Mode of access: World Wide Web. |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
System requirements: Adobe Acrobat Reader. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
Part of: Synthesis digital library of engineering and computer science. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc. note |
Includes bibliographical references (pages 65-76). |
| 505 0# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
1. Introduction -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
2. Historical perspectives of scaled MOSFET evolution -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
3. Simulation results of on-state drain current and subthreshold drain current at substrate temperatures below 300 K -- 3.1 Modeling equations to derive on-state drain current as a function of drain voltage for different gate voltages operated at reduced substrate temperatures below 300 K -- 3.1.1 Modeling of substrate or bulk mobility as a function of substrate temperature for 1 [mu]m channel length MOSFET -- 3.1.2 Modeling of drain current as a function of drain voltage for different gate voltage biases at different substrate temperatures -- 3.1.3 Modeling of drain current as a function of substrate temperatures for different gate voltage and drain biases conditions for a long-channel n-MOSFET -- 3.2 Drain current as a function of gate voltage for a fixed low-drain voltage at different substrate temperatures for the 1 [mu]m channel length n-MOSFET [mu]m -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
4. Simulation results on substrate mobility and on-channel mobility of conventional long-channel n-MOSFET at substrate temperatures 300 K and below -- 4.1 Electron mobility in p-type substrate of silicon varying with substrate acceptor doping concentrations for different substrate temperatures -- 4.2 Simulation results of electron carrier mobility at the surface of an n-channel MOSFET for different substrate temperatures -- 4.2.1 Modeling equations for extraction of surface mobility as a function of vertical effective field -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
5. Simulation outcomes of subthreshold slope factor or coefficient for different substrate temperatures at the vicinity of a subthreshold region to deep subthreshold region of a long-channel n-MOSFET -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
6. Review of scaled device architectures for their feasibility to low temperature operation simulation perspectives of the author's current research -- 6.1 Silicon nanowire transistor performance analysis with consideration of low-temperature operation -- 6.2 Negative capacitance ferroelectric Fet (Ncfet) performance analysis with consideration of low-temperature operation -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
7. Summary of research results and conclusions -- References -- Author's biography. |
| 506 ## - RESTRICTIONS ON ACCESS NOTE |
|---|
| Terms governing access |
Abstract freely available; full-text restricted to subscribers or individual document purchasers. |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Compendex |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
INSPEC |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google scholar |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google book search |
| 520 3# - SUMMARY, ETC. |
|---|
| Summary, etc. |
Low substrate/lattice temperature (< 300 K) operation of n-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book [1] in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100-300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 m channel length n-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures. |
| 530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE |
|---|
| Additional physical form available note |
Also available in print. |
| 588 ## - SOURCE OF DESCRIPTION NOTE |
|---|
| Source of description note |
Title from PDF title page (viewed on August 1, 2018). |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Low temperature engineering. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Metal oxide semiconductor field-effect transistors. |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
threshold voltage |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
substrate temperature |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
on-state drain current |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
subthreshold leakage current |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
bulk mobility |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
channel mobility |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
surface potential |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
inversion charge density |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
subthreshold slope |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
Tunnel FET |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
silicon nanowire FET |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
ferroelectric FET |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
|---|
| Relationship information |
Print version: |
| International Standard Book Number |
9781681733852 |
| -- |
9781681733876 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis digital library of engineering and computer science. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis lectures on emerging engineering technologies ; |
| Volume/sequential designation |
# 10. |
| International Standard Serial Number |
2381-1439 |
| 856 42 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Materials specified |
Abstract with links to resource |
| Uniform Resource Identifier |
https://ieeexplore.ieee.org/servlet/opac?bknumber=8411421 |
