| 000 -LEADER |
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| fixed length control field |
04722nam a2200709 i 4500 |
| 001 - CONTROL NUMBER |
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| control field |
6812858 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
IEEE |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20200413152845.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS |
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| fixed length control field |
m eo d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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| fixed length control field |
cr cn |||m|||a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
051205s2005 caua ob 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
1598290045 (electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781598290059 (electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| Canceled/invalid ISBN |
9781598290042 (print) |
| 024 7# - OTHER STANDARD IDENTIFIER |
|---|
| Standard number or code |
10.2200/S00005ED1V01Y200508SSM001 |
| Source of number or code |
doi |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(CaBNVSL)gtp00531410 |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(OCoLC)62458047 |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
WAU |
| Transcribing agency |
WAU |
| Modifying agency |
CaBNVSL |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
|---|
| Classification number |
QC585 |
| Item number |
.K554 2005 |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
|---|
| Classification number |
537/.24 |
| Edition number |
22 |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
|---|
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
|
| Local cutter number (OCLC) ; Book number/undivided call number, CALL (RLIN) |
MoCl |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Kim, Young-Hee, |
| Dates associated with a name |
1972- |
| 245 10 - TITLE STATEMENT |
|---|
| Title |
Hf-based high-k dielectrics |
| Medium |
[electronic resource] : |
| Remainder of title |
process development, performance characterization, and reliability / |
| Statement of responsibility, etc. |
Young-Hee Kim, Jack C. Lee. |
| 250 ## - EDITION STATEMENT |
|---|
| Edition statement |
1st ed. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) : |
| Name of publisher, distributor, etc. |
Morgan & Claypool Publishers, |
| Date of publication, distribution, etc. |
c2005. |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 electronic text (x, 92 p. : ill.) : |
| Other physical details |
digital file. |
| 490 1# - SERIES STATEMENT |
|---|
| Series statement |
Synthesis lectures on solid state materials and devices, |
| International Standard Serial Number |
1932-1724 ; |
| Volume/sequential designation |
#1 |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
System requirements: Adobe Acrobat Reader. |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
Mode of access: World Wide Web. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
Series from website. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
Part of : Synthesis digital library of engineering and computer science. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc. note |
Includes bibliographical references (p. 86-90). |
| 505 0# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Introduction -- Front end device technology evolutions -- Beyond 45nm technology -- Issues in high-k dielectrics -- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress -- Motivation for high-k gate dielectrics -- Reliability issues of high-k dielectrics -- Breakdown behaviors of HfO2 under dc stressing -- Dynamic reliability of HfO2 -- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics -- Previous results -- Effect of D2 anneal on various surface preparations -- Effect of high temperature forming gas in terms of reliability -- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology -- Motivation -- Experimental procedure -- Results and discussion -- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics -- Motivation -- Experimental procedure -- Results and discussion. |
| 506 1# - RESTRICTIONS ON ACCESS NOTE |
|---|
| Terms governing access |
Abstract freely available; full-text restricted to subscribers or individual document purchasers. |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google book search |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google scholar |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
INSPEC |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Compendex |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results fromthe polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdownmay be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices. |
| 530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE |
|---|
| Additional physical form available note |
Also available in print. |
| 588 ## - SOURCE OF DESCRIPTION NOTE |
|---|
| Source of description note |
Title from PDF t.p. (viewed on Oct. 27, 2008). |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Dielectrics. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Hafnium oxide. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Integrated circuits |
| General subdivision |
Reliability. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Semiconductors |
| General subdivision |
Junctions. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Breakdown (Electricity) |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Metal oxide semiconductor field-effect transistors. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
TDDB. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
Weibull slope. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
MOSFET. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
Soft breakdown. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
Mobility. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
Interface engineering. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
Dynamic reliability. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
High-k dielectrics. |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) |
|---|
| Topical term or geographic name as entry element |
HfO2. |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Lee, Jack Chung-Yeung. |
| 730 0# - ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis digital library of engineering and computer science. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis lectures on solid state materials and devices, |
| International Standard Serial Number |
1932-1724 ; |
| Volume/sequential designation |
#1. |
| 856 42 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Materials specified |
Abstract with links to resource |
| Uniform Resource Identifier |
http://ieeexplore.ieee.org/servlet/opac?bknumber=6812858 |
| 856 42 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Materials specified |
Abstract with links to resource |
| Uniform Resource Identifier |
http://dx.doi.org/10.2200/S00005ED1V01Y200508SSM001 |
