Welcome to P K Kelkar Library, Online Public Access Catalogue (OPAC)

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1. EPITAXIAL GROWTH OF 6H SILICON CARBIDE IN THE TEMPERATURE RANGE 1320(DEGREE) TO 1390(DEGREE) C

by Will,Herbert A | Powell,J Anthony.

Material type: book Book Description: 14.Publisher: Nasa, Washington, D.C. 1974Availability: Items available for reference: PK Kelkar Library, IIT Kanpur [Call number: NASA TN D-7558 -] (1).

2. GROWTH OF 2H SILICON CARBIDE CRYSTALS

by Powell,J Anthony.

Material type: book Book Description: 13.Publisher: Nasa, Washington, D.C. 1969Availability: Items available for reference: PK Kelkar Library, IIT Kanpur [Call number: NASA TN D-5313 -] (1).

3. REFRACTIVE INDEX AND BIREFRINGENCE OF 2H SILICON CARBIDE

by Powell,J Anthony.

Material type: book Book Description: 17.Publisher: Nasa, Washington, D.C. 1972Availability: Items available for reference: PK Kelkar Library, IIT Kanpur [Call number: NASA TN D-6635 -] (1).

4. LOW-TEMERATURE SOLID-STATE PHASE TRANFORMATIONS IN 2H SILICON CARBIE.

by Will,Herbert A | Powell,J Anthony.

Material type: book Book Description: 31.Publisher: Nasa, Washington, D.C. 1972Availability: Items available for reference: PK Kelkar Library, IIT Kanpur [Call number: NASA TN D-6717] (1).

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