EPITAXIAL GROWTH OF 6H SILICON CARBIDE IN THE TEMPERATURE RANGE 1320(DEGREE) TO 1390(DEGREE) C
By: Will,Herbert A.
Contributor(s): Powell,J Anthony.
Material type:
BookPublisher: Nasa, Washington, D.C. 1974Description: 14.DDC classification: NASA | TN D-7558 -
| Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Technical Report
|
PK Kelkar Library, IIT Kanpur | General Stacks | NASA TN D-7558 - (Browse shelf) | Not for loan | TR10242 |
Total holds: 0
Bound With Nasa Tn D-7551-60
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