Modeling bipolar power semiconductor devices
Contributor(s): Gachovska, Tanya K.
Material type:
BookSeries: Synthesis digital library of engineering and computer science: ; Synthesis lectures on power electronics: # 5.Publisher: San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) : Morgan & Claypool, c2013Description: 1 electronic text (xviii, 75 p.) : ill., digital file.ISBN: 9781627051224 (electronic bk.).Subject(s): Power semiconductors -- Mathematical models | Insulated gate bipolar transistors -- Mathematical models | power semiconductor devices | physics-based model | Fourier series solution | drift region | carrier diffusion | transient switching behaviorDDC classification: 621.38152 Online resources: Abstract with links to resource | Abstract with links to full text Also available in print.| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
E books
|
PK Kelkar Library, IIT Kanpur | Available | EBKE481 |
Mode of access: World Wide Web.
System requirements: Adobe Acrobat Reader.
Part of: Synthesis digital library of engineering and computer science.
Series from website.
Includes bibliographical references (p. 71-72).
1. Introduction to power semiconductor device modeling --
2. Physics of power semiconductor devices -- 2.1 On-state operation of bipolar devices -- 2.1.1 Lightly doped drift region -- 2.1.2 Depletion region -- 2.1.3 Emitter regions -- 2.1.4 Base or gate regions -- 2.1.5 N buffer layer region -- 2.1.6 MOS gate -- 2.2 Off state --
3. Modeling of a power diode and IGBT -- 3.1 Modeling a power diode -- 3.1.1 P+ emitter region -- 3.1.2 N- drift region -- 3.1.3 N+ emitter region -- 3.1.4 Voltage drop -- 3.2 Modeling an NPT IGBT -- 3.2.1 P emitter region -- 3.2.2 N- drift region -- 3.2.3 MOS region -- 3.2.4 Voltage drop --
4. IGBT under an inductive load-switching condition in Simulink -- 4.1 Electrical circuit in Simulink -- 4.2 Diode subsystem -- 4.3 NPT IGBT subsystem --
5. Parameter extraction -- 5.1 Parameter estimation for power diodes -- 5.1.1 Area A -- 5.1.2 High-level injection lifetime HL -- 5.1.3 Drift region doping NN- -- 5.1.4 Drift region width WN- -- 5.1.5 Recombination parameters hn and hp -- 5.2 Parameter estimation for IGBTs -- 5.2.1 MOS parameters -- 5.2.2 IGBT geometry parameters -- 5.2.3 IGBT drift region parameters -- 5.2.4 IGBT lifetime parameters -- 5.2.5 IGBT recombination and buffer layer parameters -- 5.3 Initial circuit parameter estimation --
References -- Authors' biographies.
Abstract freely available; full-text restricted to subscribers or individual document purchasers.
Compendex
INSPEC
Google scholar
Google book search
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
Also available in print.
Title from PDF t.p. (viewed on April 19, 2013).
There are no comments for this item.