| 000 -LEADER |
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| fixed length control field |
04551nam a2200661 i 4500 |
| 001 - CONTROL NUMBER |
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| control field |
6813481 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
IEEE |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20200413152909.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS |
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| fixed length control field |
m eo d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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| fixed length control field |
cr cn |||m|||a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
130419s2013 caua foab 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781627051224 (electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| Canceled/invalid ISBN |
9781627051217 (pbk.) |
| 024 7# - OTHER STANDARD IDENTIFIER |
|---|
| Standard number or code |
10.2200/S00483ED1V01Y201302PEL005 |
| Source of number or code |
doi |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(CaBNVSL)swl00402294 |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(OCoLC)837360310 |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
CaBNVSL |
| Transcribing agency |
CaBNVSL |
| Modifying agency |
CaBNVSL |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
|---|
| Classification number |
TK7871.85 |
| Item number |
.M636 2013 |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
|---|
| Classification number |
621.38152 |
| Edition number |
23 |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
|---|
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
|
| Local cutter number (OCLC) ; Book number/undivided call number, CALL (RLIN) |
MoCl |
| 245 00 - TITLE STATEMENT |
|---|
| Title |
Modeling bipolar power semiconductor devices |
| Medium |
[electronic resource] / |
| Statement of responsibility, etc. |
Tanya K. Gachovska ... [et al.]. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) : |
| Name of publisher, distributor, etc. |
Morgan & Claypool, |
| Date of publication, distribution, etc. |
c2013. |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 electronic text (xviii, 75 p.) : |
| Other physical details |
ill., digital file. |
| 490 1# - SERIES STATEMENT |
|---|
| Series statement |
Synthesis lectures on power electronics, |
| International Standard Serial Number |
1931-9533 ; |
| Volume/sequential designation |
# 5 |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
Mode of access: World Wide Web. |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
System requirements: Adobe Acrobat Reader. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
Part of: Synthesis digital library of engineering and computer science. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
Series from website. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc. note |
Includes bibliographical references (p. 71-72). |
| 505 0# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
1. Introduction to power semiconductor device modeling -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
2. Physics of power semiconductor devices -- 2.1 On-state operation of bipolar devices -- 2.1.1 Lightly doped drift region -- 2.1.2 Depletion region -- 2.1.3 Emitter regions -- 2.1.4 Base or gate regions -- 2.1.5 N buffer layer region -- 2.1.6 MOS gate -- 2.2 Off state -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
3. Modeling of a power diode and IGBT -- 3.1 Modeling a power diode -- 3.1.1 P+ emitter region -- 3.1.2 N- drift region -- 3.1.3 N+ emitter region -- 3.1.4 Voltage drop -- 3.2 Modeling an NPT IGBT -- 3.2.1 P emitter region -- 3.2.2 N- drift region -- 3.2.3 MOS region -- 3.2.4 Voltage drop -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
4. IGBT under an inductive load-switching condition in Simulink -- 4.1 Electrical circuit in Simulink -- 4.2 Diode subsystem -- 4.3 NPT IGBT subsystem -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
5. Parameter extraction -- 5.1 Parameter estimation for power diodes -- 5.1.1 Area A -- 5.1.2 High-level injection lifetime HL -- 5.1.3 Drift region doping NN- -- 5.1.4 Drift region width WN- -- 5.1.5 Recombination parameters hn and hp -- 5.2 Parameter estimation for IGBTs -- 5.2.1 MOS parameters -- 5.2.2 IGBT geometry parameters -- 5.2.3 IGBT drift region parameters -- 5.2.4 IGBT lifetime parameters -- 5.2.5 IGBT recombination and buffer layer parameters -- 5.3 Initial circuit parameter estimation -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
References -- Authors' biographies. |
| 506 1# - RESTRICTIONS ON ACCESS NOTE |
|---|
| Terms governing access |
Abstract freely available; full-text restricted to subscribers or individual document purchasers. |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Compendex |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
INSPEC |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google scholar |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google book search |
| 520 3# - SUMMARY, ETC. |
|---|
| Summary, etc. |
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. |
| 530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE |
|---|
| Additional physical form available note |
Also available in print. |
| 588 ## - SOURCE OF DESCRIPTION NOTE |
|---|
| Source of description note |
Title from PDF t.p. (viewed on April 19, 2013). |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Power semiconductors |
| General subdivision |
Mathematical models. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Insulated gate bipolar transistors |
| General subdivision |
Mathematical models. |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
power semiconductor devices |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
physics-based model |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
Fourier series solution |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
drift region |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
carrier diffusion |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
transient switching behavior |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Gachovska, Tanya K. |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
|---|
| Relationship information |
Print version: |
| International Standard Book Number |
9781627051217 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis digital library of engineering and computer science. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis lectures on power electronics ; |
| Volume/sequential designation |
# 5. |
| International Standard Serial Number |
1931-9533 |
| 856 42 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Materials specified |
Abstract with links to resource |
| Uniform Resource Identifier |
http://ieeexplore.ieee.org/servlet/opac?bknumber=6813481 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Materials specified |
Abstract with links to full text |
| Uniform Resource Identifier |
http://dx.doi.org/10.2200/S00483ED1V01Y201302PEL005 |
