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EPITAXIAL GROWTH OF 6H SILICON CARBIDE IN THE TEMPERATURE RANGE 1320(DEGREE) TO 1390(DEGREE) C

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BookPublisher: Nasa, Washington, D.C. 1974Description: 14.DDC classification: NASA | TN D-7558 -

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Item type	Current location	Collection	Call number	Status	Date due	Barcode	Item holds
Technical Report	PK Kelkar Library, IIT Kanpur	General Stacks	NASA TN D-7558 - (Browse shelf)	Not for loan		TR10242

Total holds: 0

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Previous	NASA TN D-7555 - EFFECTS OF PRESSURE, OXYGEN CONCENTRATION, AND FORCED CONVECTION ON FLAME SPREAD RATE OF PLEXIGLAS, NYLON, AND TEFLON	NASA TN D-7556 - SELF-LUBRICATING PLASMA-SPRAYED COMPOSITES FOR SLIDING-CONTACT BEARINGS TO 900(DEGREE) C	NASA TN D-7557 - RESEARCH TURBINE FOR HIGH-TEMPERATURE CORE ENGINE APPLICATION	NASA TN D-7558 - EPITAXIAL GROWTH OF 6H SILICON CARBIDE IN THE TEMPERATURE RANGE 1320(DEGREE) TO 1390(DEGREE) C	NASA TN D-756 - EFFECTS OF GEOMETRIC VARIATIONS ON LIFT AUGMENTATION OF SIMPLE-PLENUM -CHAMBER GROUND-EFFECT MODELS	NASA TN D-7560 - FILTER SPECTROMETER CONCEPT FOR FACSIMILE CAMERAS	NASA TN D-7562 EXPERIMENTAL AND ANALYTICAL DETERMINATION OF VIBRATION CHARACTERISTICS OF CORRUGATED, FLEXIBLY SUPPORTED, HEAT-SHIELD PANELS	Next

Bound With Nasa Tn D-7551-60

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