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Layout techniques for MOSFETS / (Record no. 562197)

000 -LEADER
fixed length control field 04543nam a2200733 i 4500
001 - CONTROL NUMBER
control field 7446015
003 - CONTROL NUMBER IDENTIFIER
control field IEEE
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200413152921.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m eo d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cn |||m|||a
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 160414s2016 caua foab 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781627054829
Qualifying information ebook
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781627054881
Qualifying information print
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.2200/S00704ED1V01Y201602EET007
Source of number or code doi
035 ## - SYSTEM CONTROL NUMBER
System control number (CaBNVSL)swl00406396
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)946774746
040 ## - CATALOGING SOURCE
Original cataloging agency CaBNVSL
Language of cataloging eng
Description conventions rda
Transcribing agency CaBNVSL
Modifying agency CaBNVSL
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7871.95
Item number .G555 2016
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815284
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Gimenez, Salvador Pinillos,
Dates associated with a name 1962-,
Relator term author.
245 10 - TITLE STATEMENT
Title Layout techniques for MOSFETS /
Statement of responsibility, etc. Salvador Pinillos Gimenez.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture San Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) :
Name of producer, publisher, distributor, manufacturer Morgan & Claypool,
Date of production, publication, distribution, manufacture, or copyright notice 2016.
300 ## - PHYSICAL DESCRIPTION
Extent 1 PDF (xi, 69 pages) :
Other physical details illustrations.
336 ## - CONTENT TYPE
Content type term text
Source rdacontent
337 ## - MEDIA TYPE
Media type term electronic
Source isbdmedia
338 ## - CARRIER TYPE
Carrier type term online resource
Source rdacarrier
490 1# - SERIES STATEMENT
Series statement Synthesis lectures on emerging engineering technologies,
International Standard Serial Number 2381-1439 ;
Volume/sequential designation # 7
538 ## - SYSTEM DETAILS NOTE
System details note Mode of access: World Wide Web.
538 ## - SYSTEM DETAILS NOTE
System details note System requirements: Adobe Acrobat Reader.
500 ## - GENERAL NOTE
General note Part of: Synthesis digital library of engineering and computer science.
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references (pages 61-68).
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note 1. Introduction -- 2. The origin of the innovative layout techniques for MOSFETs -- 2.1 Observing and combining different new effects in MOSFETs -- 3. Diamond MOSFET (hexagonal gate geometry) -- 4. Octo layout style (octagonal gate shape) for MOSFET -- 5. Ellipsoidal layout style for MOSFET -- 6. Fish layout style ("<" gate shape) for MOSFET -- 7. Annular circular gate layout style for MOSFET -- 8. Wave layout style ("S" gate shape) for MOSFET -- 9. Conclusions and comments -- References -- About the author.
506 1# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Abstract freely available; full-text restricted to subscribers or individual document purchasers.
510 0# - CITATION/REFERENCES NOTE
Name of source Compendex
510 0# - CITATION/REFERENCES NOTE
Name of source INSPEC
510 0# - CITATION/REFERENCES NOTE
Name of source Google scholar
510 0# - CITATION/REFERENCES NOTE
Name of source Google book search
520 3# - SUMMARY, ETC.
Summary, etc. This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on PN junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note Also available in print.
588 ## - SOURCE OF DESCRIPTION NOTE
Source of description note Title from PDF title page (viewed on April 14, 2016).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Metal oxide semiconductor field-effect transistors.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Integrated circuit layout.
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term layout techniques
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Circular Annular MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term pillar surrounding gate MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Cynthia MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Diamond MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Octo MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Ellipsoidal MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Fish MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Wave
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term MOSFET
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term LCE
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term PAMDLE
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term DEPAMBBRE
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term DLEFRE
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term high temperature
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Ionizing Radiation Effects
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term TID and SEE
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
International Standard Book Number 9781627054881
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Synthesis digital library of engineering and computer science.
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Synthesis lectures on emerging engineering technologies ;
Volume/sequential designation # 7.
International Standard Serial Number 2381-1439
856 42 - ELECTRONIC LOCATION AND ACCESS
Materials specified Abstract with links to resource
Uniform Resource Identifier http://ieeexplore.ieee.org/servlet/opac?bknumber=7446015
Holdings
Withdrawn status Lost status Damaged status Not for loan Permanent Location Current Location Date acquired Barcode Date last seen Price effective from Koha item type
        PK Kelkar Library, IIT Kanpur PK Kelkar Library, IIT Kanpur 2020-04-13 EBKE697 2020-04-13 2020-04-13 E books

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