000 -LEADER |
fixed length control field |
04543nam a2200733 i 4500 |
001 - CONTROL NUMBER |
control field |
7446015 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
IEEE |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20200413152921.0 |
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS |
fixed length control field |
m eo d |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr cn |||m|||a |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
160414s2016 caua foab 000 0 eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9781627054829 |
Qualifying information |
ebook |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
Canceled/invalid ISBN |
9781627054881 |
Qualifying information |
print |
024 7# - OTHER STANDARD IDENTIFIER |
Standard number or code |
10.2200/S00704ED1V01Y201602EET007 |
Source of number or code |
doi |
035 ## - SYSTEM CONTROL NUMBER |
System control number |
(CaBNVSL)swl00406396 |
035 ## - SYSTEM CONTROL NUMBER |
System control number |
(OCoLC)946774746 |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
CaBNVSL |
Language of cataloging |
eng |
Description conventions |
rda |
Transcribing agency |
CaBNVSL |
Modifying agency |
CaBNVSL |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
TK7871.95 |
Item number |
.G555 2016 |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
621.3815284 |
Edition number |
23 |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Gimenez, Salvador Pinillos, |
Dates associated with a name |
1962-, |
Relator term |
author. |
245 10 - TITLE STATEMENT |
Title |
Layout techniques for MOSFETS / |
Statement of responsibility, etc. |
Salvador Pinillos Gimenez. |
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
Place of production, publication, distribution, manufacture |
San Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) : |
Name of producer, publisher, distributor, manufacturer |
Morgan & Claypool, |
Date of production, publication, distribution, manufacture, or copyright notice |
2016. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
1 PDF (xi, 69 pages) : |
Other physical details |
illustrations. |
336 ## - CONTENT TYPE |
Content type term |
text |
Source |
rdacontent |
337 ## - MEDIA TYPE |
Media type term |
electronic |
Source |
isbdmedia |
338 ## - CARRIER TYPE |
Carrier type term |
online resource |
Source |
rdacarrier |
490 1# - SERIES STATEMENT |
Series statement |
Synthesis lectures on emerging engineering technologies, |
International Standard Serial Number |
2381-1439 ; |
Volume/sequential designation |
# 7 |
538 ## - SYSTEM DETAILS NOTE |
System details note |
Mode of access: World Wide Web. |
538 ## - SYSTEM DETAILS NOTE |
System details note |
System requirements: Adobe Acrobat Reader. |
500 ## - GENERAL NOTE |
General note |
Part of: Synthesis digital library of engineering and computer science. |
504 ## - BIBLIOGRAPHY, ETC. NOTE |
Bibliography, etc. note |
Includes bibliographical references (pages 61-68). |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
1. Introduction -- 2. The origin of the innovative layout techniques for MOSFETs -- 2.1 Observing and combining different new effects in MOSFETs -- 3. Diamond MOSFET (hexagonal gate geometry) -- 4. Octo layout style (octagonal gate shape) for MOSFET -- 5. Ellipsoidal layout style for MOSFET -- 6. Fish layout style ("<" gate shape) for MOSFET -- 7. Annular circular gate layout style for MOSFET -- 8. Wave layout style ("S" gate shape) for MOSFET -- 9. Conclusions and comments -- References -- About the author. |
506 1# - RESTRICTIONS ON ACCESS NOTE |
Terms governing access |
Abstract freely available; full-text restricted to subscribers or individual document purchasers. |
510 0# - CITATION/REFERENCES NOTE |
Name of source |
Compendex |
510 0# - CITATION/REFERENCES NOTE |
Name of source |
INSPEC |
510 0# - CITATION/REFERENCES NOTE |
Name of source |
Google scholar |
510 0# - CITATION/REFERENCES NOTE |
Name of source |
Google book search |
520 3# - SUMMARY, ETC. |
Summary, etc. |
This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on PN junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach. |
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE |
Additional physical form available note |
Also available in print. |
588 ## - SOURCE OF DESCRIPTION NOTE |
Source of description note |
Title from PDF title page (viewed on April 14, 2016). |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Metal oxide semiconductor field-effect transistors. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Integrated circuit layout. |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
layout techniques |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Circular Annular MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
pillar surrounding gate MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Cynthia MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Diamond MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Octo MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Ellipsoidal MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Fish MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Wave |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
MOSFET |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
LCE |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
PAMDLE |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
DEPAMBBRE |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
DLEFRE |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
high temperature |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Ionizing Radiation Effects |
653 ## - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
TID and SEE |
776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
Relationship information |
Print version: |
International Standard Book Number |
9781627054881 |
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
Uniform title |
Synthesis digital library of engineering and computer science. |
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
Uniform title |
Synthesis lectures on emerging engineering technologies ; |
Volume/sequential designation |
# 7. |
International Standard Serial Number |
2381-1439 |
856 42 - ELECTRONIC LOCATION AND ACCESS |
Materials specified |
Abstract with links to resource |
Uniform Resource Identifier |
http://ieeexplore.ieee.org/servlet/opac?bknumber=7446015 |