| 000 | 00586nam a2200181 4500 | ||
|---|---|---|---|
| 005 | 20200814113645.0 | ||
| 008 | 200814b xxu||||| |||| 00| 0 eng d | ||
| 040 | _cIIT Kanpur | ||
| 041 | _aeng | ||
| 100 | _aFarrell, Richard | ||
| 245 |
_aDevelopment of an experimental silicon carbide backward diode operable to 1000 degree K [NASA TN D-5183] _cRichard Farrell |
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| 260 |
_aWashington, D. C. _bNASA _c1969 |
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| 300 | _a5p | ||
| 440 | _aNational Aeronautics and Space Administration (NASA) | ||
| 505 | _aNASA technical note D-5183 | ||
| 650 | _aSilicon carbide | ||
| 942 | _cREF | ||
| 999 |
_c563325 _d563325 |
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