| 000 | 05068nam a2200769 i 4500 | ||
|---|---|---|---|
| 001 | 7863695 | ||
| 003 | IEEE | ||
| 005 | 20200413152923.0 | ||
| 006 | m eo d | ||
| 007 | cr cn |||m|||a | ||
| 008 | 170224s2017 caua foab 000 0 eng d | ||
| 020 |
_a9781627056915 _qebook |
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| 020 |
_z9781627056960 _qprint |
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| 024 | 7 |
_a10.2200/S00750ED1V01Y201701EET009 _2doi |
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| 035 | _a(CaBNVSL)swl00407142 | ||
| 035 | _a(OCoLC)973736486 | ||
| 040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
| 050 | 4 |
_aTK8315 _b.A727 2017 |
|
| 082 | 0 | 4 |
_a621.367 _223 |
| 100 | 1 |
_aArai, Yasuo, _eauthor. |
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| 245 | 1 | 0 |
_aRadiation imaging detectors using SOI technology / _cYasuo Arai and Ikuo Kurachi. |
| 264 | 1 |
_a[San Rafael, California] : _bMorgan & Claypool, _c2017. |
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| 300 |
_a1 PDF (xi, 59 pages) : _billustrations. |
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| 336 |
_atext _2rdacontent |
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| 337 |
_aelectronic _2isbdmedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 490 | 1 |
_aSynthesis lectures on emerging engineering technologies, _x2381-1439 ; _v# 9 |
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| 538 | _aMode of access: World Wide Web. | ||
| 538 | _aSystem requirements: Adobe Acrobat Reader. | ||
| 500 | _aPart of: Synthesis digital library of engineering and computer science. | ||
| 504 | _aIncludes bibliographical references (pages 51-58). | ||
| 505 | 0 | _a1. Introduction -- | |
| 505 | 8 | _a2. Major issues in SOI pixel detector -- 2.1 Back-gate effect -- 2.2 Crosstalk between sensors and circuits -- 2.3 Leakage current -- 2.4 High-resistivity wafer -- 2.5 Radiation hardness -- | |
| 505 | 8 | _a3. Basic SOI pixel process -- 3.1 Advantages of SOI structure -- 3.2 FD-SOI radiation sensor fabrication process -- 3.2.1 FZ wafer utilization for handle wafer -- 3.2.2 p-n junction diode and contact -- 3.2.3 Well formation in handle wafer -- | |
| 505 | 8 | _a4. Radiation hardness improvements -- 4.1 FD-SOI radiation hardness -- 4.2 Cause of nMOSFET drain current change -- 4.3 Cause of p-MOSFET drain current change -- 4.4 Improvement of p-MOSFET radiation hardness -- | |
| 505 | 8 | _a5. Advanced process developments -- 5.1 Double SOI -- 5.2 Stitching -- 5.3 Back-gate pinned SOI pixel -- 5.4 3D vertical integration -- 5.5 Super-steep subthreshold slope transistor -- | |
| 505 | 8 | _a6. Detector research and developments -- 6.1 Integration type pixel -- 6.2 Counting-type pixel (CNTPIX) -- 6.3 X-ray detector for astrophysics (XRPIX) -- 6.4 Vertex detector for charged particles (PIXOR) -- 6.5 XFEL detector (SOPHIAS) -- 6.6 Fermilab SOI CMOS detector (MAMBO) -- 6.7 LBNL SOI-imager -- 6.8 Ultra-low temperature applications -- 6.9 Readout board (SEABAS) -- | |
| 505 | 8 | _a7. Summary -- Bibliography -- Authors' biographies. | |
| 506 | 1 | _aAbstract freely available; full-text restricted to subscribers or individual document purchasers. | |
| 510 | 0 | _aCompendex | |
| 510 | 0 | _aINSPEC | |
| 510 | 0 | _aGoogle scholar | |
| 510 | 0 | _aGoogle book search | |
| 520 | 3 | _aSilicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently. This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors. Since the SOI detector has both a thick sensing region and CMOS transistors in a monolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors. | |
| 530 | _aAlso available in print. | ||
| 588 | _aTitle from PDF title page (viewed on February 24, 2017). | ||
| 650 | 0 | _aSilicon-on-insulator technology. | |
| 650 | 0 |
_aImaging systems _xDesign and construction. |
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| 653 | _aradiation image sensor | ||
| 653 | _asilicon-on-insulator | ||
| 653 | _aSOI | ||
| 653 | _aX-ray diffraction | ||
| 653 | _aX-ray imaging | ||
| 653 | _aX-ray astronomy | ||
| 653 | _ahigh-energy particle physics | ||
| 653 | _asynchrotron radiation | ||
| 653 | _apixel detector | ||
| 653 | _aCMOS | ||
| 653 | _aradiation tolerance | ||
| 653 | _amonolithic sensor | ||
| 653 | _aparticle detector | ||
| 700 | 1 |
_aKurachi, Ikuo, _eauthor. |
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| 776 | 0 | 8 |
_iPrint version: _z9781627056960 |
| 830 | 0 | _aSynthesis digital library of engineering and computer science. | |
| 830 | 0 |
_aSynthesis lectures on emerging engineering technologies ; _v# 9. _x2381-1439 |
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| 856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/servlet/opac?bknumber=7863695 |
| 999 |
_c562247 _d562247 |
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