| 000 | 04722nam a2200745 i 4500 | ||
|---|---|---|---|
| 001 | 6812676 | ||
| 003 | IEEE | ||
| 005 | 20200413152912.0 | ||
| 006 | m eo d | ||
| 007 | cr cn |||m|||a | ||
| 008 | 131221s2014 caua foab 000 0 eng d | ||
| 020 |
_a9781627051903 _qebook |
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| 020 |
_z9781627051897 _qprint |
||
| 024 | 7 |
_a10.2200/S00547ED1V01Y201311PEL006 _2doi |
|
| 035 | _a(CaBNVSL)swl00402969 | ||
| 035 | _a(OCoLC)866564238 | ||
| 040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
| 050 | 4 |
_aTK7871.85 _b.G237 2014 |
|
| 082 | 0 | 4 |
_a621.38152 _223 |
| 090 |
_a _bMoCl _e201311PEL006 |
||
| 100 | 1 |
_aGachovska, Tanya Kirilova., _eauthor. |
|
| 245 | 1 | 0 |
_aTransient electro-thermal modeling of bipolar power semiconductor devices / _cTanya Kirilova Gachovska, Bin Du, Jerry L. Hudgins, Enrico Santi. |
| 264 | 1 |
_aSan Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) : _bMorgan & Claypool, _c2014. |
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| 300 |
_a1 PDF (xvi, 68 pages) : _billustrations. |
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| 336 |
_atext _2rdacontent |
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| 337 |
_aelectronic _2isbdmedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 490 | 1 |
_aSynthesis lectures on power electronics, _x1931-9533 ; _v# 6 |
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| 538 | _aMode of access: World Wide Web. | ||
| 538 | _aSystem requirements: Adobe Acrobat Reader. | ||
| 500 | _aPart of: Synthesis digital library of engineering and computer science. | ||
| 500 | _aSeries from website. | ||
| 504 | _aIncludes bibliographical references (page 65). | ||
| 505 | 0 | _aNomenclature -- 1. Temperature dependencies of material and device parameters -- 1.1 Introduction -- 1.2 Temperature dependencies -- 1.2.1 Intrinsic carrier concentration -- 1.2.2 Ionized donor impurity concentration -- 1.2.3 Carrier mobility -- 1.2.4 Lifetime -- 1.2.5 Emitter recombination parameters -- 1.2.6 Threshold voltage and transconductance -- | |
| 505 | 8 | _a2. One-dimensional thermal model -- 2.1 Package design -- 2.2 Heat conduction problem in DBC structure -- 2.3 Equivalent RC network thermal model -- 2.4 One-dimensional Fourier series thermal model -- | |
| 505 | 8 | _a3. Realization of Power IGBT and diode thermal model -- 3.1 Introduction -- 3.2 Realization of equivalent RC network -- 3.3 Realization of one-dimensional Fourier-series thermal model -- 3.4 Temperature dependent parameters of diodes and their connection to an electrical model -- 3.5 Temperature-dependent parameters of NPT IGBT and their connection to the electrical model -- | |
| 505 | 8 | _aA. Appendix -- References -- Authors' biographies. | |
| 506 | 1 | _aAbstract freely available; full-text restricted to subscribers or individual document purchasers. | |
| 510 | 0 | _aCompendex | |
| 510 | 0 | _aINSPEC | |
| 510 | 0 | _aGoogle scholar | |
| 510 | 0 | _aGoogle book search | |
| 520 | 3 | _aThis book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semi-conductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. | |
| 530 | _aAlso available in print. | ||
| 588 | _aTitle from PDF title page (viewed on December 21, 2013). | ||
| 650 | 0 |
_aPower semiconductors _xMathematical models. |
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| 650 | 0 |
_aInsulated gate bipolar transistors _xMathematical models. |
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| 653 | _apower semiconductor devices | ||
| 653 | _aphysics-based model | ||
| 653 | _aFourier series solution | ||
| 653 | _adrift region | ||
| 653 | _acarrier diffusion | ||
| 653 | _atransient switching behavior | ||
| 653 | _athermal model | ||
| 653 | _apackaging | ||
| 653 | _amodules | ||
| 700 | 1 |
_aDu, Bin., _eauthor. |
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| 700 | 1 |
_aHudgins, Jerry L., _eauthor. |
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| 700 | 1 |
_aSanti, Enrico., _eauthor. |
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| 776 | 0 | 8 |
_iPrint version: _z9781627051897 |
| 830 | 0 | _aSynthesis digital library of engineering and computer science. | |
| 830 | 0 |
_aSynthesis lectures on power electronics ; _v# 6. _x1931-9533 |
|
| 856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/servlet/opac?bknumber=6812676 |
| 856 | 4 | 0 |
_3Abstract with links to full text _uhttp://dx.doi.org/10.2200/S00547ED1V01Y201311PEL006 |
| 999 |
_c562042 _d562042 |
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