| 000 | 04551nam a2200661 i 4500 | ||
|---|---|---|---|
| 001 | 6813481 | ||
| 003 | IEEE | ||
| 005 | 20200413152909.0 | ||
| 006 | m eo d | ||
| 007 | cr cn |||m|||a | ||
| 008 | 130419s2013 caua foab 000 0 eng d | ||
| 020 | _a9781627051224 (electronic bk.) | ||
| 020 | _z9781627051217 (pbk.) | ||
| 024 | 7 |
_a10.2200/S00483ED1V01Y201302PEL005 _2doi |
|
| 035 | _a(CaBNVSL)swl00402294 | ||
| 035 | _a(OCoLC)837360310 | ||
| 040 |
_aCaBNVSL _cCaBNVSL _dCaBNVSL |
||
| 050 | 4 |
_aTK7871.85 _b.M636 2013 |
|
| 082 | 0 | 4 |
_a621.38152 _223 |
| 090 |
_a _bMoCl _e201302PEL005 |
||
| 245 | 0 | 0 |
_aModeling bipolar power semiconductor devices _h[electronic resource] / _cTanya K. Gachovska ... [et al.]. |
| 260 |
_aSan Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) : _bMorgan & Claypool, _cc2013. |
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| 300 |
_a1 electronic text (xviii, 75 p.) : _bill., digital file. |
||
| 490 | 1 |
_aSynthesis lectures on power electronics, _x1931-9533 ; _v# 5 |
|
| 538 | _aMode of access: World Wide Web. | ||
| 538 | _aSystem requirements: Adobe Acrobat Reader. | ||
| 500 | _aPart of: Synthesis digital library of engineering and computer science. | ||
| 500 | _aSeries from website. | ||
| 504 | _aIncludes bibliographical references (p. 71-72). | ||
| 505 | 0 | _a1. Introduction to power semiconductor device modeling -- | |
| 505 | 8 | _a2. Physics of power semiconductor devices -- 2.1 On-state operation of bipolar devices -- 2.1.1 Lightly doped drift region -- 2.1.2 Depletion region -- 2.1.3 Emitter regions -- 2.1.4 Base or gate regions -- 2.1.5 N buffer layer region -- 2.1.6 MOS gate -- 2.2 Off state -- | |
| 505 | 8 | _a3. Modeling of a power diode and IGBT -- 3.1 Modeling a power diode -- 3.1.1 P+ emitter region -- 3.1.2 N- drift region -- 3.1.3 N+ emitter region -- 3.1.4 Voltage drop -- 3.2 Modeling an NPT IGBT -- 3.2.1 P emitter region -- 3.2.2 N- drift region -- 3.2.3 MOS region -- 3.2.4 Voltage drop -- | |
| 505 | 8 | _a4. IGBT under an inductive load-switching condition in Simulink -- 4.1 Electrical circuit in Simulink -- 4.2 Diode subsystem -- 4.3 NPT IGBT subsystem -- | |
| 505 | 8 | _a5. Parameter extraction -- 5.1 Parameter estimation for power diodes -- 5.1.1 Area A -- 5.1.2 High-level injection lifetime HL -- 5.1.3 Drift region doping NN- -- 5.1.4 Drift region width WN- -- 5.1.5 Recombination parameters hn and hp -- 5.2 Parameter estimation for IGBTs -- 5.2.1 MOS parameters -- 5.2.2 IGBT geometry parameters -- 5.2.3 IGBT drift region parameters -- 5.2.4 IGBT lifetime parameters -- 5.2.5 IGBT recombination and buffer layer parameters -- 5.3 Initial circuit parameter estimation -- | |
| 505 | 8 | _aReferences -- Authors' biographies. | |
| 506 | 1 | _aAbstract freely available; full-text restricted to subscribers or individual document purchasers. | |
| 510 | 0 | _aCompendex | |
| 510 | 0 | _aINSPEC | |
| 510 | 0 | _aGoogle scholar | |
| 510 | 0 | _aGoogle book search | |
| 520 | 3 | _aThis book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. | |
| 530 | _aAlso available in print. | ||
| 588 | _aTitle from PDF t.p. (viewed on April 19, 2013). | ||
| 650 | 0 |
_aPower semiconductors _xMathematical models. |
|
| 650 | 0 |
_aInsulated gate bipolar transistors _xMathematical models. |
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| 653 | _apower semiconductor devices | ||
| 653 | _aphysics-based model | ||
| 653 | _aFourier series solution | ||
| 653 | _adrift region | ||
| 653 | _acarrier diffusion | ||
| 653 | _atransient switching behavior | ||
| 700 | 1 | _aGachovska, Tanya K. | |
| 776 | 0 | 8 |
_iPrint version: _z9781627051217 |
| 830 | 0 | _aSynthesis digital library of engineering and computer science. | |
| 830 | 0 |
_aSynthesis lectures on power electronics ; _v# 5. _x1931-9533 |
|
| 856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/servlet/opac?bknumber=6813481 |
| 856 | 4 | 0 |
_3Abstract with links to full text _uhttp://dx.doi.org/10.2200/S00483ED1V01Y201302PEL005 |
| 999 |
_c561981 _d561981 |
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