| 000 | 00632cam a2200217 a 4500 | ||
|---|---|---|---|
| 005 | 20170420125203.0 | ||
| 008 | 810417m19811983gw a b 001 0 eng | ||
| 020 | _a0387105182 (U.S. : v. 1) | ||
| 020 | _a0387115153 (U.S. : v. 2) | ||
| 040 | _cIITK | ||
| 041 | _aeng | ||
| 082 | 0 | 0 |
_a537.622 _bL284p |
| 100 | 1 | _aLannoo, M. | |
| 245 | 1 | 0 |
_aPoint defects in semiconductors I _cM. Lannoo and J. Bourgoin. _btheoretical aspects |
| 260 |
_aBerlin _bSpringer-Verlag _c1981 |
||
| 300 | _a2 v. : | ||
| 440 | 0 | _aSpringer series in solid-state sciences | |
| 650 | 0 |
_aSemiconductors _xDefects |
|
| 700 | 1 | _aBourgoin, J. | |
| 942 | _cBK | ||
| 999 |
_c556597 _d556597 |
||