000			04793nam a22006015i 4500
001			978-3-540-74529-7
003			DE-He213
005			20161121231145.0
007			cr nn 008mamaa
008			100301s2008 gw | s |||| 0|eng d
020			_a9783540745297 _9978-3-540-74529-7
024	7		_a10.1007/978-3-540-74529-7 _2doi
050		4	_aTA1750-1750.22
072		7	_aTJFD _2bicssc
072		7	_aTEC021000 _2bisacsh
072		7	_aTEC008080 _2bisacsh
082	0	4	_a620.11295 _223
082	0	4	_a620.11297 _223
245	1	0	_aDilute III-V Nitride Semiconductors and Material Systems _h[electronic resource] : _bPhysics and Technology / _cedited by Ayşe Erol.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2008.
300			_aXXXII, 592 p. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aMaterials Science, _x0933-033X ; _v105
505	0		_aEnergetic Beam Synthesis of Dilute Nitrides and Related Alloys -- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells -- Electronic Band Structure of Highly Mismatched Semiconductor Alloys -- Electronic Structure of GaNxAs1?x Under Pressure -- Experimental Studies of GaInNAs Conduction Band Structure -- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues -- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides -- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells -- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys -- The Hall Mobility in Dilute Nitrides -- Spin Dynamics in Dilute Nitride -- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs -- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates -- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP -- Doping, Electrical Properties and Solar Cell Application of GaInNAs -- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate -- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers -- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition -- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers -- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides -- Dilute Nitride Photodetector and Modulator Devices.
520			_aA major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
650		0	_aMaterials science.
650		0	_aSolid state physics.
650		0	_aOptics.
650		0	_aOptoelectronics.
650		0	_aPlasmons (Physics).
650		0	_aSpectroscopy.
650		0	_aMicroscopy.
650		0	_aEngineering.
650		0	_aOptical materials.
650		0	_aElectronic materials.
650	1	4	_aMaterials Science.
650	2	4	_aOptical and Electronic Materials.
650	2	4	_aSolid State Physics.
650	2	4	_aSpectroscopy and Microscopy.
650	2	4	_aEngineering, general.
650	2	4	_aOptics, Optoelectronics, Plasmonics and Optical Devices.
700	1		_aErol, Ayşe. _eeditor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783540745280
830		0	_aMaterials Science, _x0933-033X ; _v105
856	4	0	_uhttp://dx.doi.org/10.1007/978-3-540-74529-7
912			_aZDB-2-CMS
950			_aChemistry and Materials Science (Springer-11644)
999			_c509421 _d509421