000			03635nam a22006375i 4500
001			978-3-540-47235-3
003			DE-He213
005			20161121231142.0
007			cr nn 008mamaa
008			100301s2007 gw | s |||| 0|eng d
020			_a9783540472353 _9978-3-540-47235-3
024	7		_a10.1007/978-3-540-47235-3 _2doi
050		4	_aTA1750-1750.22
072		7	_aTJFD _2bicssc
072		7	_aTEC021000 _2bisacsh
072		7	_aTEC008080 _2bisacsh
082	0	4	_a620.11295 _223
082	0	4	_a620.11297 _223
245	1	0	_aWide Bandgap Semiconductors _h[electronic resource] : _bFundamental Properties and Modern Photonic and Electronic Devices / _cedited by Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2007.
300			_aXXV, 460 p. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aDevelopment and Applications of Wide Bandgap Semiconductors -- Fundamental Properties of Wide Bandgap Semiconductors -- Photonic Devices -- Electronic Devices -- Novel Nano-Heterostructure Materials and Related Devices -- Crystal Growth.
520			_aThis book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices. After reviue of the basic physics of WBGS and the relevance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the effect of defects on device performance are highlighted and solutions proposed based on recent studies.
650		0	_aMaterials science.
650		0	_aSolid state physics.
650		0	_aLasers.
650		0	_aPhotonics.
650		0	_aSpectroscopy.
650		0	_aMicroscopy.
650		0	_aMicrowaves.
650		0	_aOptical engineering.
650		0	_aElectronics.
650		0	_aMicroelectronics.
650		0	_aOptical materials.
650		0	_aElectronic materials.
650	1	4	_aMaterials Science.
650	2	4	_aOptical and Electronic Materials.
650	2	4	_aSolid State Physics.
650	2	4	_aSpectroscopy and Microscopy.
650	2	4	_aMicrowaves, RF and Optical Engineering.
650	2	4	_aLaser Technology, Photonics.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
700	1		_aTakahashi, Kiyoshi. _eeditor.
700	1		_aYoshikawa, Akihiko. _eeditor.
700	1		_aSandhu, Adarsh. _eeditor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783540472346
856	4	0	_uhttp://dx.doi.org/10.1007/978-3-540-47235-3
912			_aZDB-2-CMS
950			_aChemistry and Materials Science (Springer-11644)
999			_c509338 _d509338