000 | 03314nam a22005655i 4500 | ||
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001 | 978-1-4020-8615-1 | ||
003 | DE-He213 | ||
005 | 20161121231139.0 | ||
007 | cr nn 008mamaa | ||
008 | 100301s2008 ne | s |||| 0|eng d | ||
020 |
_a9781402086151 _9978-1-4020-8615-1 |
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024 | 7 |
_a10.1007/978-1-4020-8615-1 _2doi |
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050 | 4 | _aTA401-492 | |
072 | 7 |
_aTGM _2bicssc |
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072 | 7 |
_aTEC021000 _2bisacsh |
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082 | 0 | 4 |
_a620.11 _223 |
245 | 1 | 0 |
_aMicroscopy of Semiconducting Materials 2007 _h[electronic resource] / _cedited by A. G. Cullis, P. A. Midgley. |
264 | 1 |
_aDordrecht : _bSpringer Netherlands, _c2008. |
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300 |
_aXIV, 498 p. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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490 | 1 |
_aSpringer Proceedings in Physics, _x0930-8989 ; _v120 |
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505 | 0 | _aWide Band-Gap Nitrides -- General Heteroepitaxial Layers -- High Resolution Microscopy and Nanoanalysis -- Self-Organised and Quantum Domain Structures -- Processed Silicon and Other Device Materials -- Device and Doping Studies -- FIB, SEM and SPM Advances. | |
520 | _aThe fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods. Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment. | ||
650 | 0 | _aMaterials science. | |
650 | 0 | _aSolid state physics. | |
650 | 0 | _aPhysical measurements. | |
650 | 0 | _aMeasurement. | |
650 | 0 | _aSpectroscopy. | |
650 | 0 | _aMicroscopy. | |
650 | 0 | _aElectronics. | |
650 | 0 | _aMicroelectronics. | |
650 | 1 | 4 | _aMaterials Science. |
650 | 2 | 4 | _aMaterials Science, general. |
650 | 2 | 4 | _aSolid State Physics. |
650 | 2 | 4 | _aSpectroscopy and Microscopy. |
650 | 2 | 4 | _aMeasurement Science and Instrumentation. |
650 | 2 | 4 | _aElectronics and Microelectronics, Instrumentation. |
700 | 1 |
_aCullis, A. G. _eeditor. |
|
700 | 1 |
_aMidgley, P. A. _eeditor. |
|
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9781402086144 |
830 | 0 |
_aSpringer Proceedings in Physics, _x0930-8989 ; _v120 |
|
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-1-4020-8615-1 |
912 | _aZDB-2-CMS | ||
950 | _aChemistry and Materials Science (Springer-11644) | ||
999 |
_c509275 _d509275 |