| 000 | 07381nam a22005655i 4500 | ||
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| 001 | 978-1-4020-8425-6 | ||
| 003 | DE-He213 | ||
| 005 | 20161121231139.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 100301s2008 ne | s |||| 0|eng d | ||
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_a9781402084256 _9978-1-4020-8425-6 |
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| 024 | 7 |
_a10.1007/978-1-4020-8425-6 _2doi |
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| 050 | 4 | _aTA1750-1750.22 | |
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_aTJFD _2bicssc |
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_aTEC021000 _2bisacsh |
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_aTEC008080 _2bisacsh |
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| 082 | 0 | 4 |
_a620.11295 _223 |
| 082 | 0 | 4 |
_a620.11297 _223 |
| 245 | 1 | 0 |
_aNarrow Gap Semiconductors 2007 _h[electronic resource] : _bProceedings of the 13th International Conference, 8–12 July, 2007, Guildford, UK / _cedited by Ben Murdin, Steve Clowes. |
| 264 | 1 |
_aDordrecht : _bSpringer Netherlands, _c2008. |
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| 300 |
_aXVI, 216 p. _bonline resource. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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| 490 | 1 |
_aSpringer Proceedings in Physics, _x0930-8989 ; _v119 |
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| 505 | 0 | _aSpin-Related Phenomena -- Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well -- Photogalvanic Effects in HgTe Quantum Wells -- Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers -- Control and Probe of Carrier and Spin Relaxations in InSb Based Structures -- Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells -- Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures -- Temperature Dependence of the Electron Lande g-Factor in InSb -- Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix -- Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells -- Growth, Fabrication, Characterisation and Theory -- Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses -- Band Structure of InSbN and GaSbN -- Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications -- Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution -- InMnAs Quantum Dots: A Raman Spectroscopy Analysis -- Conduction Band States in AlP/GaP Quantum Wells -- Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy -- Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE -- Epitaxial Growth and Characterization of PbGeEuTe Layers -- Monte Carlo Simulation of Electron Transport in PbTe -- L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots -- Antimony Distribution in the InSb/InAs QD Heterostructures -- Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy -- Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation -- Monte Carlo Study of Transport Properties of InN -- New Type of Combined Resonance in p-PbTe -- Carbon Nanotubes and Graphene -- Theory of Third-Order Optical Susceptibility of Single-Wall Carbon Nanotubes With Account of Coulomb Interaction -- Unveiling the Magnetically Induced Field-Effect in Carbon Nanotubes Devices -- Transient Zitterbewegung of Electrons in Graphene and Carbon Nanotubes -- Cross-Polarized Exciton Absorption in Semiconducting Carbon Nanotubes -- Nanocrystals and Nanowires -- Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 ?m -- InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes -- Electronic Devices -- Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers operating above 3?m at Room Temperature -- Electroluminescence From Electrically Pumped GaSb-Based VCSELs -- Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE -- Farfield Measurements of Y-Coupled Quantum Cascade Lasers -- Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers -- Magnetic Field Effects in InSb/AlxIn1?xSb Quantum-Well Light-Emitting Diodes -- Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers -- InAs Quantum Hot Electron Transistor -- Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation -- Single Photon Detection in the Long Wave Infrared -- High-Performance Fabry-Perot and Distributed-Feedback Interband Cascade Lasers -- Mid-Infrared Lead-Salt VECSEL (Vertical External Cavity Surface Emitting Laser) for Spectroscopy -- Optically Pumped GaSb-Based VECSELs -- Magneto-Transport and Magneto-Optics -- Cyclotron Resonance Photoconductivity of a Two-Dimensional Electron Gas in HgTe Quantum Wells -- Extrinsic Electrons and Carrier Accumulation in AlxIn1?xSb/InSb Quantum Wells: Well-Width Dependence -- Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1?xSb/InSb Quantum Wells -- Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GalnAsSb Single Heterointerface -- Magnetoexcitons in Strained InSb Quantum Wells. | |
| 520 | _aNarrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors. | ||
| 650 | 0 | _aMaterials science. | |
| 650 | 0 | _aOptics. | |
| 650 | 0 | _aOptoelectronics. | |
| 650 | 0 | _aPlasmons (Physics). | |
| 650 | 0 | _aEngineering. | |
| 650 | 0 | _aOptical materials. | |
| 650 | 0 | _aElectronic materials. | |
| 650 | 1 | 4 | _aMaterials Science. |
| 650 | 2 | 4 | _aOptical and Electronic Materials. |
| 650 | 2 | 4 | _aCharacterization and Evaluation of Materials. |
| 650 | 2 | 4 | _aOptics, Optoelectronics, Plasmonics and Optical Devices. |
| 650 | 2 | 4 | _aEngineering, general. |
| 700 | 1 |
_aMurdin, Ben. _eeditor. |
|
| 700 | 1 |
_aClowes, Steve. _eeditor. |
|
| 710 | 2 | _aSpringerLink (Online service) | |
| 773 | 0 | _tSpringer eBooks | |
| 776 | 0 | 8 |
_iPrinted edition: _z9781402084249 |
| 830 | 0 |
_aSpringer Proceedings in Physics, _x0930-8989 ; _v119 |
|
| 856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-1-4020-8425-6 |
| 912 | _aZDB-2-CMS | ||
| 950 | _aChemistry and Materials Science (Springer-11644) | ||
| 999 |
_c509270 _d509270 |
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