000 | 03355nam a22005535i 4500 | ||
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001 | 978-3-540-27163-5 | ||
003 | DE-He213 | ||
005 | 20161121231101.0 | ||
007 | cr nn 008mamaa | ||
008 | 100301s2005 gw | s |||| 0|eng d | ||
020 |
_a9783540271635 _9978-3-540-27163-5 |
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024 | 7 |
_a10.1007/b138703 _2doi |
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050 | 4 | _aTA418.7-418.76 | |
050 | 4 | _aTA418.9.T45 | |
072 | 7 |
_aTGM _2bicssc |
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072 | 7 |
_aPNRX _2bicssc |
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072 | 7 |
_aTEC021000 _2bisacsh |
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082 | 0 | 4 |
_a620.44 _223 |
245 | 1 | 0 |
_aUltrathin Magnetic Structures III _h[electronic resource] : _bFundamentals of Nanomagnetism / _cedited by J. Anthony C. Bland, Bretislav Heinrich. |
264 | 1 |
_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2005. |
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300 |
_aXIV, 318 p. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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505 | 0 | _aElectron Transport in Magnetic Multilayers -- Spin Polarized Electron Tunneling -- Interlayer Exchange Coupling -- Spin Relaxation in Magnetic Metallic Layers and Multilayers -- Nonequilibrium Spin Dynamics in Laterally Defined Magnetic Structures -- Polarised Neutron Reflection Studies of Thin Magnetic Films -- X-ray Scattering Studies of Ultrathin Metallic Structures. | |
520 | _aThe ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. This volume describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. Volume IV deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is designed to be accessible both to newcomers and to experts already working in this field who would like to get a better understanding of this very diversified area of research. | ||
650 | 0 | _aMaterials science. | |
650 | 0 | _aMagnetism. | |
650 | 0 | _aMagnetic materials. | |
650 | 0 | _aOptical materials. | |
650 | 0 | _aElectronic materials. | |
650 | 0 | _aNanotechnology. | |
650 | 0 |
_aMaterials _xSurfaces. |
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650 | 0 | _aThin films. | |
650 | 1 | 4 | _aMaterials Science. |
650 | 2 | 4 | _aSurfaces and Interfaces, Thin Films. |
650 | 2 | 4 | _aOptical and Electronic Materials. |
650 | 2 | 4 | _aNanotechnology. |
650 | 2 | 4 | _aMagnetism, Magnetic Materials. |
700 | 1 |
_aBland, J. Anthony C. _eeditor. |
|
700 | 1 |
_aHeinrich, Bretislav. _eeditor. |
|
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9783540219538 |
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/b138703 |
912 | _aZDB-2-CMS | ||
950 | _aChemistry and Materials Science (Springer-11644) | ||
999 |
_c508319 _d508319 |