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020 _a9781402030130
_9978-1-4020-3013-0
024 7 _a10.1007/1-4020-3013-4
_2doi
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050 4 _aTK7874-7874.9
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072 7 _aTEC008070
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245 1 0 _aScience and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
_h[electronic resource] :
_bProceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004 /
_cedited by Denis Flandre, Alexei N. Nazarov, Peter L.F. Hemment.
264 1 _aDordrecht :
_bSpringer Netherlands,
_c2005.
300 _aXII, 348 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aNATO Science Series II: Mathematics, Physics and Chemistry,
_x1568-2609 ;
_v185
505 0 _aTechnology and Economics -- High Temperature Electronics - Cluster Effects -- On the Evolution of SOI Materials and Devices -- SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices -- SOI Material Technologies -- Smart Cut Technology: The Path for Advanced SOI Substrates -- Porous Silicon Based SOI: History and Prospects -- Achievement of SiGe-on-Insulator Technology -- CVD Diamond Films for SOI Technologies -- Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator -- Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures -- SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment -- Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias -- Reliability and Operation of SOI Devices in Harsh Environment -- Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices -- Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs -- Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications -- Silicon-on-Insulator Circuits for Application at High Temperatures -- High-Voltage SOI Devices for Automotive Applications -- Heat Generation Analysis in SOI LDMOS Power Transistors -- Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures -- MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications -- Temperature Dependence of RF Losses in High-Resistivity SOI Substrates -- Radiation Effects -- Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs -- Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons -- Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates -- Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs -- Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs -- Characterization and Simulation of SOI Devices Operating under Harsh Environment -- Low Cost High Temperature Test System for SOI Devices -- Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures -- Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs -- Novel SOI Devices and Sensors Operating at Harsh Conditions -- SiGe Heterojunction Bipolar Transistors on Insulating Substrates -- Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI) -- High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications -- A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C) -- Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation -- Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields -- Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit -- Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices -- Compact Model of the Nanoscale Gate-All-Around MOSFET -- Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior -- Fabrication of SOI Nano Devices.
520 _aThis proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.
650 0 _aEngineering.
650 0 _aAutomotive engineering.
650 0 _aElectrical engineering.
650 0 _aMicrowaves.
650 0 _aOptical engineering.
650 0 _aElectronics.
650 0 _aMicroelectronics.
650 0 _aOptical materials.
650 0 _aElectronic materials.
650 1 4 _aEngineering.
650 2 4 _aElectronics and Microelectronics, Instrumentation.
650 2 4 _aOptical and Electronic Materials.
650 2 4 _aAutomotive Engineering.
650 2 4 _aElectrical Engineering.
650 2 4 _aMicrowaves, RF and Optical Engineering.
700 1 _aFlandre, Denis.
_eeditor.
700 1 _aNazarov, Alexei N.
_eeditor.
700 1 _aHemment, Peter L.F.
_eeditor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9781402030116
830 0 _aNATO Science Series II: Mathematics, Physics and Chemistry,
_x1568-2609 ;
_v185
856 4 0 _uhttp://dx.doi.org/10.1007/1-4020-3013-4
912 _aZDB-2-ENG
950 _aEngineering (Springer-11647)
999 _c507162
_d507162