000			02744nam a22004095i 4500
001			978-0-387-23802-9
003			DE-He213
005			20161121231012.0
007			cr nn 008mamaa
008			100301s2005 xxu| s |||| 0|eng d
020			_a9780387238029 _9978-0-387-23802-9
024	7		_a10.1007/b102361 _2doi
050		4	_aTA1-2040
072		7	_aTBC _2bicssc
072		7	_aTEC000000 _2bisacsh
082	0	4	_a620 _223
100	1		_aDing, Yongwang. _eauthor.
245	1	0	_aHigh-Linearity CMOS RF Front-End Circuits _h[electronic resource] / _cby Yongwang Ding, Ramesh Harjani.
264		1	_aBoston, MA : _bSpringer US, _c2005.
300			_aXVI, 128 p. 25 illus. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aRF Devices in CMOS Process -- Linear Transconductors in CMOS -- Linearization with Harmonic Cancellation -- LNA Design in CMOS -- Down-Conversion Mixer Design in CMOS -- Power Amplifier Design in CMOS -- Conclusions.
520			_aThe rapidly growing wireless communication industry is increasingly demanding CMOS RF ICs due to their lower costs and higher integration levels. The RF front-end of such wireless systems often needs to handle widely disparate signal levels: small desired signals and large interferers. Therefore, it becomes necessary to have highly linear circuits to increase the system dynamic range. However, traditional CMOS circuit designs are usually limited in either their speed or in their linear performance. New techniques are needed to meet the demand for high linearity at radio frequencies. High-Linearity CMOS RF Front-End Circuits presents some unique techniques to enhance the linearity of both the receiver and transmitter. For example, using harmonic cancellation techniques, the linearity of the receiver front-end can be increased by few tens of dB with only minimal impact on the other circuit parameters. The new parallel class A&B power amplifier can not only increase the transmitter's output power in the linear range, but can also result in significant savings in power consumption. High-Linearity CMOS RF Front-End Circuits can be used as a textbook for graduate courses in RF CMOS design and will also be useful as a reference for the practicing engineer.
650		0	_aEngineering.
650	1	4	_aEngineering.
650	2	4	_aEngineering, general.
700	1		_aHarjani, Ramesh. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9780387238012
856	4	0	_uhttp://dx.doi.org/10.1007/b102361
912			_aZDB-2-ENG
950			_aEngineering (Springer-11647)
999			_c507101 _d507101