000			03243nam a22005295i 4500
001			978-3-540-45298-0
003			DE-He213
005			20161121230953.0
007			cr nn 008mamaa
008			100301s2006 gw | s |||| 0|eng d
020			_a9783540452980 _9978-3-540-45298-0
024	7		_a10.1007/978-3-540-45298-0 _2doi
050		4	_aQC770-798
072		7	_aPHP _2bicssc
072		7	_aSCI051000 _2bisacsh
082	0	4	_a539.73 _223
100	1		_aNastasi, Michael. _eauthor.
245	1	0	_aIon Implantation and Synthesis of Materials _h[electronic resource] / _cby Michael Nastasi, James W. Mayer.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2006.
300			_aXIV, 263 p. 131 illus. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aGeneral Features and Fundamental Concepts -- Particle Interactions -- Dynamics of Binary Elastic Collisions -- Cross-Section -- Ion Stopping -- Ion Range and Range Distribution -- Displacements and Radiation Damage -- Channeling -- Doping, Diffusion and Defects in Ion-Implanted Si -- Crystallization and Regrowth of Amorphous Si -- Si Slicing and Layer Transfer: Ion-Cut -- Surface Erosion During Implantation: Sputtering -- Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing -- Application of Ion Implantation Techniques in CMOS Fabrication -- Ion implantation in CMOS Technology: Machine Challenges.
520			_aIon implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
650		0	_aPhysics.
650		0	_aPhysical chemistry.
650		0	_aParticle acceleration.
650		0	_aCondensed matter.
650		0	_aOptical materials.
650		0	_aElectronic materials.
650		0	_aMaterials science.
650	1	4	_aPhysics.
650	2	4	_aParticle Acceleration and Detection, Beam Physics.
650	2	4	_aCondensed Matter Physics.
650	2	4	_aOptical and Electronic Materials.
650	2	4	_aCharacterization and Evaluation of Materials.
650	2	4	_aPhysical Chemistry.
700	1		_aMayer, James W. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783540236740
856	4	0	_uhttp://dx.doi.org/10.1007/978-3-540-45298-0
912			_aZDB-2-PHA
950			_aPhysics and Astronomy (Springer-11651)
999			_c506640 _d506640