000 04217nam a22004935i 4500
001 978-1-4020-3078-9
003 DE-He213
005 20161121230941.0
007 cr nn 008mamaa
008 100301s2005 ne | s |||| 0|eng d
020 _a9781402030789
_9978-1-4020-3078-9
024 7 _a10.1007/1-4020-3078-9
_2doi
050 4 _aQC1-75
072 7 _aPH
_2bicssc
072 7 _aSCI055000
_2bisacsh
082 0 4 _a530
_223
245 1 0 _aMaterials Fundamentals of Gate Dielectrics
_h[electronic resource] /
_cedited by Alexander A. Demkov, Alexandra Navrotsky.
264 1 _aDordrecht :
_bSpringer Netherlands,
_c2005.
300 _aVIII, 476 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aMaterials and Physical Properties of High-K Oxide Films -- Device Principles of High-K Dielectrics -- Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics -- Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces -- Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides -- Dielectric Properties of Simple and Complex Oxides from First Principles -- IVb Transition Metal Oxides and Silicates: An Ab Initio Study -- The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors -- Interfacial Properties of Epitaxial Oxide/Semiconductor Systems -- Functional Structures -- Mechanistic Studies of Dielectric Growth on Silicon -- Methodology for Development of High-? Stacked Gate Dielectrics on III–V Semiconductors.
520 _aThis book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering. .
650 0 _aPhysics.
650 0 _aPhysical chemistry.
650 0 _aElectrical engineering.
650 0 _aOptical materials.
650 0 _aElectronic materials.
650 1 4 _aPhysics.
650 2 4 _aPhysics, general.
650 2 4 _aPhysical Chemistry.
650 2 4 _aOptical and Electronic Materials.
650 2 4 _aElectrical Engineering.
700 1 _aDemkov, Alexander A.
_eeditor.
700 1 _aNavrotsky, Alexandra.
_eeditor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9781402030772
856 4 0 _uhttp://dx.doi.org/10.1007/1-4020-3078-9
912 _aZDB-2-PHA
950 _aPhysics and Astronomy (Springer-11651)
999 _c506345
_d506345