000 | 00483 a2200181 4500 | ||
---|---|---|---|
082 |
_a537.622 _bC76s |
||
100 | _aO'Connor, J. R. | ||
245 | 1 |
_aSILICON CARBIDE, A HIGH TEMPERATURE SEMICONDUCTOR _cPROCEEDINGS |
|
260 |
_aOxford _bPergamon _c1960 |
||
300 | _a521 | ||
500 | _aIncludes Bibliographies And Bibliographical Footnotes | ||
650 | _aSilicon Carbide | ||
650 | _aSemiconductors | ||
700 | _aSmiltens, J. | ||
700 | _a | ||
964 | _gCIRC | ||
997 | _a12171 C | ||
999 |
_c452576 _d452576 |