000 00256pam a2200109a 44500
082 _aBTS
_bMONO 4813
100 _aC A Lee
245 1 _aIonization rates of holes and electrons in silicon
260 _a
_b
_c
700 _aR L Batdort
997 _aTR20207 C
999 _c406508
_d406508