| 000 | 00640pam a2200205a 44500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20221125120552.0 | ||
| 008 | 221125b xxu||||| |||| 00| 0 eng d | ||
| 040 | _cIIT Kanpur | ||
| 041 | _aeng | ||
| 100 | _aEvans, John C. | ||
| 245 | 1 | _aELECTRON-BEAM CRYSTALLIZATION OF SILICON, GERMANIUM,AND CADMIUM SULFIDE [NASA TN D-4522] | |
| 260 |
_bNational Aeronautics and Space Administration _c1968 _aWashington, D.C. |
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| 300 | _a22p | ||
| 440 | _aNational Aeronautics and Space Administration | ||
| 440 | _aNASA Technical Note | ||
| 500 | _aBound vol.contains NASA TN D 4521-4530 | ||
| 650 | _aSilicon | ||
| 942 | _cTR | ||
| 999 |
_c400539 _d400539 |
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