| 000 | 00454 a2200133 4500 | ||
|---|---|---|---|
| 100 | _aHopkins,John B. | ||
| 245 | 1 |
_aNASA TN [D-5401] _bfabrication and characteristics of microwave backward diodes in indium arsenide _cJohn B. Hopkins |
|
| 260 |
_bNASA, Washington, D.C. _c1969 |
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| 300 | _a23p | ||
| 440 | _aNASA Technical Note | ||
| 500 | _aTechnical Note D-5400 Bound Vol. No.101163; Contents: TR13764-83 | ||
| 650 | _aAerodynamics | ||
| 942 | _cTR | ||
| 999 |
_c398587 _d398587 |
||