| 000 | 00683pam a2200205a 44500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20230116165632.0 | ||
| 008 | 230116b xxu||||| |||| 00| 0 eng d | ||
| 040 | _cIIT Kanpur | ||
| 041 | _aeng | ||
| 100 | _aBeen, Julian F. | ||
| 245 | 1 | _aEFFECTS OF NUCLEAR RADIATION ON A HIGH-RELIABILITY SILICON POWER DIODE I-CHANGE IN I-V DESIGN CHARACTERISTICS [NASA TN D-4620] | |
| 260 |
_bNational Aeronautics and Space Administration _c1968 _aWashington, D.C. |
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| 300 | _a36p | ||
| 440 | _aNational Aeronautics and Space Administration | ||
| 440 | _aNASA Technical Note | ||
| 500 | _aBound vol. contains Nasa TN D 4611-20 | ||
| 650 | _aPower diode | ||
| 942 | _cTR | ||
| 999 |
_c394702 _d394702 |
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