| 000 | 00427pam a2200145a 44500 | ||
|---|---|---|---|
| 082 |
_aNASA _bTN D-7558 - |
||
| 100 | _aWill,Herbert A | ||
| 245 | 1 | _aEPITAXIAL GROWTH OF 6H SILICON CARBIDE IN THE TEMPERATURE RANGE 1320(DEGREE) TO 1390(DEGREE) C | |
| 260 |
_a _bNasa, Washington, D.C. _c1974 |
||
| 300 | _a14 | ||
| 500 | _aBound With Nasa Tn D-7551-60 | ||
| 700 | _aPowell,J Anthony | ||
| 964 | _gCIRC | ||
| 997 | _aTR10242 C | ||
| 999 |
_c394482 _d394482 |
||