000 | 00564pam a2200181a 44500 | ||
---|---|---|---|
008 | 160408b1999 xxu||||| |||| 00| 0 eng d | ||
020 | _a0195170148 | ||
082 |
_a621.3815 _bT788O2 |
||
100 | _aYannis,Tsividis | ||
245 | 1 | _aOPERATION AND MODELING OF THE MOS TRANSISTOR | |
250 | _a2nd | ||
260 |
_a _bOxford Univ. Pr., Oxford _c1999 |
||
300 | _axx,620 | ||
650 | _aMetal Oxide Semiconductors -- Mathematical Models | ||
650 | _aMetal Oxide Semiconductor Field -- Effect Transistors -- Mathematical Models | ||
964 | _gCIRC | ||
997 | _aA146724 T | ||
999 |
_c347175 _d347175 |