000 00519pam a2200193a 44500
008 160408b1989 xxu||||| |||| 00| 0 eng d
020 _a0852964803
082 _a537.622
_bP945a2
100 _a
245 1 _aPROPERTIES OF AMORPHOUS SILICON
250 _a2nd
260 _aLondon
_bInspec, The Institution Of Electrical Engineers
_c1989
300 _axxii,656
440 _aEmis Datareviews Series
_vNo. 1
650 _aAmorphous Semiconductors
650 _aSilicon
964 _gCIRC
997 _aA105217 C
999 _c322561
_d322561