Transient electro-thermal modeling of bipolar power semiconductor devices /
By: Gachovska, Tanya Kirilova [author.].
Contributor(s): Du, Bin [author.] | Hudgins, Jerry L [author.] | Santi, Enrico [author.].
Material type:
BookSeries: Synthesis digital library of engineering and computer science: ; Synthesis lectures on power electronics: # 6.Publisher: San Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) : Morgan & Claypool, 2014.Description: 1 PDF (xvi, 68 pages) : illustrations.Content type: text Media type: electronic Carrier type: online resourceISBN: 9781627051903.Subject(s): Power semiconductors -- Mathematical models | Insulated gate bipolar transistors -- Mathematical models | power semiconductor devices | physics-based model | Fourier series solution | drift region | carrier diffusion | transient switching behavior | thermal model | packaging | modulesDDC classification: 621.38152 Online resources: Abstract with links to resource | Abstract with links to full text Also available in print.| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
E books
|
PK Kelkar Library, IIT Kanpur | Available | EBKE542 |
Mode of access: World Wide Web.
System requirements: Adobe Acrobat Reader.
Part of: Synthesis digital library of engineering and computer science.
Series from website.
Includes bibliographical references (page 65).
Nomenclature -- 1. Temperature dependencies of material and device parameters -- 1.1 Introduction -- 1.2 Temperature dependencies -- 1.2.1 Intrinsic carrier concentration -- 1.2.2 Ionized donor impurity concentration -- 1.2.3 Carrier mobility -- 1.2.4 Lifetime -- 1.2.5 Emitter recombination parameters -- 1.2.6 Threshold voltage and transconductance --
2. One-dimensional thermal model -- 2.1 Package design -- 2.2 Heat conduction problem in DBC structure -- 2.3 Equivalent RC network thermal model -- 2.4 One-dimensional Fourier series thermal model --
3. Realization of Power IGBT and diode thermal model -- 3.1 Introduction -- 3.2 Realization of equivalent RC network -- 3.3 Realization of one-dimensional Fourier-series thermal model -- 3.4 Temperature dependent parameters of diodes and their connection to an electrical model -- 3.5 Temperature-dependent parameters of NPT IGBT and their connection to the electrical model --
A. Appendix -- References -- Authors' biographies.
Abstract freely available; full-text restricted to subscribers or individual document purchasers.
Compendex
INSPEC
Google scholar
Google book search
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semi-conductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models.
Also available in print.
Title from PDF title page (viewed on December 21, 2013).
There are no comments for this item.