NASA Technical Note [NASA TN D-4901]: Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5,1.0, 2.0 and 3.0 MeV electrons 
 / Herbert D. Hendricks and Donald H. Phillips 
 .- Washington: NASA,  1968 
 .- 30p . 
.- ( National Aeronautics and Space Administration NASA Technical Note   
<br/>Bound together NASA TN D-4900 to 4910 Bound vol. Acc. No. 101121 contains Acc. No. TR13259 to TR13268 
<br/><u>Subject Headings:</u> <br/>Aeronautics;<br/>Semiconductor radiation detector;<br/>Electron irradiation;
<br/><U>Author Added Entry: </u><br/>Herbert D. Hendricks;<br/>Phillips, Donald H.;
<br><U>Copy Details:</u><br> Acc. No.: <b>TR13259</b>, Full Call No.: ,   Item type:  Technical Report , Location: COMPACT STORAGE (BASEMENT), NASA TN D-4900 to 4910<br><b>------------------------- --------------------- ------ --------- ------- ------- --------- -------- </b><br>