NASA / TN D-7558 -
Will,Herbert A
EPITAXIAL GROWTH OF 6H SILICON CARBIDE IN THE TEMPERATURE RANGE 1320(DEGREE) TO 1390(DEGREE) C
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.- Nasa, Washington, D.C., 1974
.- 14 .
Bound With Nasa Tn D-7551-60
Author Added Entry:
Powell,J Anthony;
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Acc. No.: TR10242, Full Call No.: NASA TN D-7558 -, Item type: Technical Report , Location: General Stacks,
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