Microscopy of Semiconducting Materials 2007
Contributor(s): Cullis, A. G [editor.] | Midgley, P. A [editor.] | SpringerLink (Online service).
Material type:
BookSeries: Springer Proceedings in Physics: 120Publisher: Dordrecht : Springer Netherlands, 2008.Description: XIV, 498 p. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9781402086151.Subject(s): Materials science | Solid state physics | Physical measurements | Measurement | Spectroscopy | Microscopy | Electronics | Microelectronics | Materials Science | Materials Science, general | Solid State Physics | Spectroscopy and Microscopy | Measurement Science and Instrumentation | Electronics and Microelectronics, InstrumentationDDC classification: 620.11 Online resources: Click here to access online | Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
E books
|
PK Kelkar Library, IIT Kanpur | Available | EBK9562 |
Wide Band-Gap Nitrides -- General Heteroepitaxial Layers -- High Resolution Microscopy and Nanoanalysis -- Self-Organised and Quantum Domain Structures -- Processed Silicon and Other Device Materials -- Device and Doping Studies -- FIB, SEM and SPM Advances.
The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods. Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.
There are no comments for this item.