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Low-Power High-Speed ADCs for Nanometer CMOS Integration

By: Cao, Zhiheng [author.].
Contributor(s): Yan, Shouli [author.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Analog Circuits and Signal Processing Series: Publisher: Dordrecht : Springer Netherlands, 2008.Description: XIII, 95 p. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9781402084508.Subject(s): Engineering | Energy | Electric power production | Electronic circuits | Engineering | Circuits and Systems | Energy Technology | Energy, generalDDC classification: 621.3815 Online resources: Click here to access online
Contents:
A 52 mW 10 b 210 MS/s Two-Step ADC for Digital IF Receivers in 130 nm CMOS -- A 32 mW 1.25 GS/s 6 b 2 b/Step SAR ADC in 130 nm Digital CMOS -- A 0.4 ps-RMS-Jitter 1–3 GHz Clock Multiplier PLL Using Phase-Noise Preamplification -- Conclusions and Future Directions.
In: Springer eBooksSummary: Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested. 1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input. 2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash. 3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.
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A 52 mW 10 b 210 MS/s Two-Step ADC for Digital IF Receivers in 130 nm CMOS -- A 32 mW 1.25 GS/s 6 b 2 b/Step SAR ADC in 130 nm Digital CMOS -- A 0.4 ps-RMS-Jitter 1–3 GHz Clock Multiplier PLL Using Phase-Noise Preamplification -- Conclusions and Future Directions.

Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested. 1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input. 2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash. 3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.

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