AVALANCHE BREAKDOWN VOLTAGE IN SILICON DIFFUSED P-N JUNCTIONS
By: Veloric,H S,Prince,M B.
Contributor(s): Eder,M J.
Material type: BookPublisher: 1956Description: 5.DDC classification: BTS | MONO 2705Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Technical Report | PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 2705 (Browse shelf) | Not for loan | TR19965 |
Total holds: 0
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BTS MONO 2702 SOLUBILITY OF LITHIUM IN DOPED AND UNDOPED SILICON | BTS MONO 2703 TRANSISTOR PULSE REGENERATIVE AMPLIFIERS | BTS MONO 2704 TWO-TERMINAL P-N JUNCTION DEVICES FOR FREQUENCY CONVERSION AND COMPUTATION | BTS MONO 2705 AVALANCHE BREAKDOWN VOLTAGE IN SILICON DIFFUSED P-N JUNCTIONS | BTS MONO 2706 TRANSIT TIME TRANSISTOR | BTS MONO 2707 THEORY OF PLASMA RESONANCE | BTS MONO 2708 TRANSISTORIZED BINARY PULSE REGENERATOR |
Bound With Bts Mono 2701-2704,2706-2710 Lack No.2709
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