COMPARISON OF DAMAGE IN GERMANIUM AND SILICON TRANSISTORS
By: Easley,J W.
Material type:
BookPublisher: 1958Description: 9.DDC classification: BTS | MONO 3294
| Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Technical Report
|
PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 3294 (Browse shelf) | Not for loan Untraceable | TR18969 |
Total holds: 0
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| BTS MONO 3291 DESIGN AND CHARACTERISTICS OF A DIFFUSED SILICON LOGIC AMPLIFIER TRANSISTOR | BTS MONO 3292 SIBYL | BTS MONO 3293 FAMILY OF DIFFUSED-BASE GERMANIUM TRANSISTORS | BTS MONO 3294 COMPARISON OF DAMAGE IN GERMANIUM AND SILICON TRANSISTORS | BTS MONO 3295 DEMONSTRATION OF MAGNETIC DOMAINS | BTS MONO 3296 HALL EFFECT CIRCULATOR | BTS MONO 3297 STORED CHARGE METHOD OF TRANSISTOR BASE TRANSIT ANALYSIS |
Bound With Bts Mono 3276-93,3295-3300.Lack No. 3278.
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