EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS
By: Chynowethw,G,Felldmann,W L.
Contributor(s): Logan,R A.
Material type: BookPublisher: 1961Description: 11.DDC classification: BTS | MONO 3836Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Technical Report | PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 3836 (Browse shelf) | Not for loan Untraceable | TR19292 |
Total holds: 0
Browsing PK Kelkar Library, IIT Kanpur Shelves , Collection code: General Stacks Close shelf browser
BTS MONO 3833 PREPARATION OF UNIFORM RESISTIVITY N-TYPE SILICON BY NUCLEAR TRANSMUTATION | BTS MONO 3834 HYPERFINE STRUCTURE OF FE57 IN PARAMAGNETIC AND ANTIFERROMAGNETICS FEF2 | BTS MONO 3835 SEPARATION OF SULFUR, SELENIUM AND TELLURIUM FROM ARSENIC | BTS MONO 3836 EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS | BTS MONO 3837 SELF-DIFFUSION OF NEARLY SPHERICAL MOLECULES | BTS MONO 3838 MASS SPECTROGRAPHIC STUDIES OF IMPURITIES ON SURFACES | BTS MONO 3839 ADSORPTION OF GRASES ON MERCURY AT 77DEGREE K |
Bound With Bts Mono 3821-3835,3837-3850
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