MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON
By: Fuller,C S.
Contributor(s): Severiens,J C.
Material type:
BookPublisher: 1954Description: 4.DDC classification: BTS | MONO 2309
| Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Technical Report
|
PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 2309 (Browse shelf) | Not for loan Untraceable | TR19851 |
Total holds: 0
Browsing PK Kelkar Library, IIT Kanpur Shelves , Collection code: General Stacks Close shelf browser
| BTS MONO 2306 PHOTON--RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM | BTS MONO 2307 ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM | BTS MONO 2308 ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM | BTS MONO 2309 MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON | BTS MONO 2310 ACOUSTICS IN COMMUNICATION | BTS MONO 2311 SELF--POWERED SEMICONDUCTOR AMPLIFIER | BTS MONO 2312 THERMAL EFFECTS ON LIFETIME OF MINORITY CARRIERS IN GERMANIUM |
Bound With Bts Mono 2300-08,2310-25.Lack No.2302 & 2320.
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