STRUCTURE OF TELLURIUM OXIDE GLASS
By: Brady,G W.
Material type:![materialTypeLabel](/opac-tmpl/lib/famfamfam/BK.png)
Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
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PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 2878 (Browse shelf) | Not for loan | TR18828 |
Total holds: 0
Browsing PK Kelkar Library, IIT Kanpur Shelves , Collection code: General Stacks Close shelf browser
BTS MONO 2874 DONOR ELECTRON SPIN RELAXATION IN SILICON | BTS MONO 2875 TECHNIQUE FOR CONNECTING ELECTRICAL LEADS TO SEMICONDUCTORS | BTS MONO 2877 Subsidiary conditions in the collective description of electron interactions | BTS MONO 2878 STRUCTURE OF TELLURIUM OXIDE GLASS | BTS MONO 2879 TIME LAG IN NUCLEATION | BTS MONO 2880 HIGH - FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT | BTS MONO 2881 DAMAGE TO SILICON PRODUCED BY BOMBARDMENT WITH HELIUM IONS |
Bound With Bts Mono 2876-2877,2879-2900
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