NOISE TEMPERATURE IN DISTRIBUTED AMPLIFIERS
By: Yariv,A.
Contributor(s): Kompfner,R.
Material type: BookPublisher: 1961Description: 5.DDC classification: BTS | MONO 3966Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Technical Report | PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 3966 (Browse shelf) | Not for loan | TR19196 |
Total holds: 0
Browsing PK Kelkar Library, IIT Kanpur Shelves , Collection code: General Stacks Close shelf browser
BTS MONO 3963 EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SICL4 | BTS MONO 3964 SATURATION CURRENTS AT N-TYPE SILICON AND GERMANIUM ELECTRODES IN CHEMICAL ETCHING | BTS MONO 3965 GENERATING UNBIASED RATIOAND REGRESSION ESTIMATORS | BTS MONO 3966 NOISE TEMPERATURE IN DISTRIBUTED AMPLIFIERS | BTS MONO 3967 IMAGINARY PART OF X-RAY SCATTERING FACTOR FOR GERMANIUM | BTS MONO 3968 OXYGEN ADSORPTION ON SILICON AND GERMANIUM | BTS MONO 3969 SPACE-CHARGE WAVE PARAMETRIC AMPLIFIERS |
Bound With Bts Mono 3951-3965,3967-3975
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