INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS
By: Chynoweth,A G.
Contributor(s): Mckay,K G.
Material type: BookPublisher: 1957Description: 9.DDC classification: BTS | MONO 2871Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Technical Report | PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 2871 (Browse shelf) | Not for loan Untraceable | TR19724 |
Total holds: 0
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BTS MONO 2868 ELECTRON BEAM ANALYZER | BTS MONO 2869 EXPERIMENTS ON THE PHOTOMAGNETOELECTRIC EFFECT IN GERMANIUM | BTS MONO 2870 CONTRIBUTION TO THE FLOATING ZONE REFINING OF SILICON | BTS MONO 2871 INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS | BTS MONO 2872 CELL FOR THE DETERMINATION OF PRESSURE COEFFICIENTS | BTS MONO 2873 STRAIGHT-FIELD PERMANENT MANGNETS OF MINIMUM WEIGHT FOR TWT FOCUSING | BTS MONO 2874 DONOR ELECTRON SPIN RELAXATION IN SILICON |
Bound With Bts Mono 2849-2870,2872-2875 Lack No.2854
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