MECHANICAL OF FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
By: Kaiser,W,Frisch,H L.
Contributor(s): Reiss,H.
Material type: BookPublisher: 1958Description: 9.DDC classification: BTS | MONO 3199Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Technical Report | PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 3199 (Browse shelf) | Not for loan | TR18375 |
Total holds: 0
Browsing PK Kelkar Library, IIT Kanpur Shelves , Collection code: General Stacks Close shelf browser
BTS MONO 3196 DIFFUSION CONTROL IN SILICON BY CARRIER GAS COMPOSITION | BTS MONO 3197 THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE | BTS MONO 3198 ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON | BTS MONO 3199 MECHANICAL OF FORMATION OF DONOR STATES IN HEAT-TREATED SILICON | BTS MONO 3200 CONNECTIONS MADE TO PRINTED CIRCUIT BOARDS THROUGH RESISTANCE FUSING | BTS MONO 3202 MINIMUM-LOSS TWO-CONDUCTOR TRANSMISSION LINES | BTS MONO 3203 CERAMIC ELECTRICAL INSULATING MATERIALS |
Bound With Bts Mono 3176-98,3200
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