DONOR ELECTRON SPIN RELAXATION IN SILICON
By: Abrahams,E.
Material type:
BookPublisher: 1957Description: 6.DDC classification: BTS | MONO 2874
| Item type | Current location | Collection | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Technical Report
|
PK Kelkar Library, IIT Kanpur | General Stacks | BTS MONO 2874 (Browse shelf) | Not for loan Untraceable | TR19727 |
Total holds: 0
Browsing PK Kelkar Library, IIT Kanpur Shelves , Collection code: General Stacks Close shelf browser
| BTS MONO 2871 INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS | BTS MONO 2872 CELL FOR THE DETERMINATION OF PRESSURE COEFFICIENTS | BTS MONO 2873 STRAIGHT-FIELD PERMANENT MANGNETS OF MINIMUM WEIGHT FOR TWT FOCUSING | BTS MONO 2874 DONOR ELECTRON SPIN RELAXATION IN SILICON | BTS MONO 2875 TECHNIQUE FOR CONNECTING ELECTRICAL LEADS TO SEMICONDUCTORS | BTS MONO 2877 Subsidiary conditions in the collective description of electron interactions | BTS MONO 2878 STRUCTURE OF TELLURIUM OXIDE GLASS |
Bound With Bts Mono 2849-2873,2875 Lack No.2854
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