NASA Technical Note [NASA TN D-4901]: Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5,1.0, 2.0 and 3.0 MeV electrons
By: Washington. National Aeronautics and Space Administration (NASA).
Contributor(s): Herbert D. Hendricks | Phillips, Donald H.
Material type:
BookSeries: National Aeronautics and Space Administration ; NASA Technical Note. Publisher: Washington NASA 1968Description: 30p.Subject(s): Aeronautics | Semiconductor radiation detector | Electron irradiation
| Item type | Current location | Collection | Call number | Vol info | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|---|
Technical Report
|
PK Kelkar Library, IIT Kanpur | COMPACT STORAGE (BASEMENT) | NASA TN D-4900 to 4910 | Not for loan | TR13259 |
Total holds: 0
Bound together NASA TN D-4900 to 4910
Bound vol. Acc. No. 101121 contains Acc. No. TR13259 to TR13268
There are no comments for this item.