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Development of an experimental silicon carbide backward diode operable to 1000 degree K [NASA TN D-5183] (Record no. 563325)

000 -LEADER
fixed length control field 00586nam a2200181 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200814113645.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 200814b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Transcribing agency IIT Kanpur
041 ## - LANGUAGE CODE
Language code of text/sound track or separate title eng
100 ## - MAIN ENTRY--AUTHOR NAME
Personal name Farrell, Richard
245 ## - TITLE STATEMENT
Title Development of an experimental silicon carbide backward diode operable to 1000 degree K [NASA TN D-5183]
Statement of responsibility, etc Richard Farrell
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication Washington, D. C.
Name of publisher NASA
Year of publication 1969
300 ## - PHYSICAL DESCRIPTION
Number of Pages 5p
440 ## - SERIES STATEMENT/ADDED ENTRY--TITLE
Title National Aeronautics and Space Administration (NASA)
505 ## - FORMATTED CONTENTS NOTE
Formatted contents note NASA technical note D-5183
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical Term Silicon carbide
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Reference
Holdings
Withdrawn status Lost status Damaged status Not for loan Collection code Permanent Location Current Location Date acquired Accession Number Koha item type
        COMPACT STORAGE (BASEMENT) PK Kelkar Library, IIT Kanpur PK Kelkar Library, IIT Kanpur 2020-08-14 101144 [D-5183] Technical Report

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