| 000 -LEADER |
|---|
| fixed length control field |
07066nam a2200769 i 4500 |
| 001 - CONTROL NUMBER |
|---|
| control field |
7416916 |
| 003 - CONTROL NUMBER IDENTIFIER |
|---|
| control field |
IEEE |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
|---|
| control field |
20200413152920.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS |
|---|
| fixed length control field |
m eo d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
|---|
| fixed length control field |
cr cn |||m|||a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
160219s2016 cau foab 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781627058551 |
| Qualifying information |
ebook |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| Canceled/invalid ISBN |
9781627058544 |
| Qualifying information |
print |
| 024 7# - OTHER STANDARD IDENTIFIER |
|---|
| Standard number or code |
10.2200/S00696ED1V01Y201601EET004 |
| Source of number or code |
doi |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(CaBNVSL)swl00406217 |
| 035 ## - SYSTEM CONTROL NUMBER |
|---|
| System control number |
(OCoLC)940360713 |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
CaBNVSL |
| Language of cataloging |
eng |
| Description conventions |
rda |
| Transcribing agency |
CaBNVSL |
| Modifying agency |
CaBNVSL |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
|---|
| Classification number |
TK7874.75 |
| Item number |
.A835 2016 |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
|---|
| Classification number |
621.395 |
| Edition number |
23 |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Ashraf, Nabil Shovon., |
| Relator term |
author. |
| 245 10 - TITLE STATEMENT |
|---|
| Title |
New prospects of integrating low substrate temperatures with scaling-sustained device architectural innovation / |
| Statement of responsibility, etc. |
Nabil Shovon Ashraf, Shawon Alam, and Mohaiminul Alam. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
|---|
| Place of production, publication, distribution, manufacture |
San Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) : |
| Name of producer, publisher, distributor, manufacturer |
Morgan & Claypool, |
| Date of production, publication, distribution, manufacture, or copyright notice |
2016. |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 PDF (viii, 72 pages) |
| 336 ## - CONTENT TYPE |
|---|
| Content type term |
text |
| Source |
rdacontent |
| 337 ## - MEDIA TYPE |
|---|
| Media type term |
electronic |
| Source |
isbdmedia |
| 338 ## - CARRIER TYPE |
|---|
| Carrier type term |
online resource |
| Source |
rdacarrier |
| 490 1# - SERIES STATEMENT |
|---|
| Series statement |
Synthesis lectures on emerging engineering technologies, |
| International Standard Serial Number |
2381-1439 ; |
| Volume/sequential designation |
# 4 |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
Mode of access: World Wide Web. |
| 538 ## - SYSTEM DETAILS NOTE |
|---|
| System details note |
System requirements: Adobe Acrobat Reader. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
Part of: Synthesis digital library of engineering and computer science. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc. note |
Includes bibliographical references (pages 63-69). |
| 505 0# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
1. Review of research on scaled device architectures and importance of lower substrate temperature operation of n-MOSFETs -- 1.1 Introduction and scope of this e-book -- 1.2 Basic overview and operational salient features of n-channel MOSFET device transport -- 1.3 Review of challenges and bottlenecks experienced over sustained MOSFET device scaling -- 1.4 Device parameters critical for performance enhancement for generalized scaling and at the end of Moore's Law -- 1.5 Role of substrate temperature modeling and control -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
2. Step-by-step computation of threshold voltage as a function of substrate temperatures -- 2.1 Essential modeling equations for computation of threshold voltage of N-channel MOSFET as a function of substrate/lattice temperature -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
3.Simulation outcomes for profile of threshold voltage as a function of substrate temperature based on key device-centric parameters -- 3.1 Simulation outcomes of various n-MOSFET device parameters including threshold voltage as a function of temperature -- 3.2 Simulation outcome of intrinsic carrier concentration (ni ) as a function of substrate or lattice temperature -- 3.3 Simulation outcome of incomplete ionization of Dopants relevant for lower substrate temperature operation -- 3.4 Simulation outcome of Fermi energy level EF (eV) as a function of temperature -- 3.5 Temperature dependence of flat band voltage [phi]ms (V) -- 3.6 P-type substrate n-channel MOSFET bulk potential dependence on substrate/lattice temperature -- 3.7 Dependence of threshold voltage VT of n-channel MOSFET on substrate temperature for 1 micro channel length MOSFET -- 3.7.1 Modeling impact of incomplete ionization on threshold voltage at the freeze-out temperature region: a closer look -- 3.8 Threshold voltage dependence on substrate temperature for different substrate doping conditions for an n-channel MOSFET -- 3.9 Threshold voltage dependence on substrate temperature for different oxide thickness for an n-channel MOSFET -- 3.10 Threshold voltage dependence on substrate temperature for negative substrate bias for an n-channel MOSFET -- 3.11 Threshold voltage dependence on substrate temperature for positive substrate bias for an n-channel MOSFET -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
4. Scaling projection of long channel threshold voltage variability with substrate temperatures to scaled node -- 4.1 Modeling and simulation results for a long channel MOSFET as channel length is scaled further -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
5. Advantage of lower substrate temperature MOSFET operation to minimize short channel effects and enhance reliability -- 5.1 Low substrate temperature MOSFET modeling benefits in consideration of short channel effects -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
6. A prospective outlook on implementation methodology of regulating substrate temperatures on silicon die -- 6.1 A short outlook on implementation of low substrate temperature MOSFET modeling and control -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
7. Summary of research results -- 7.1 Summary of research outcomes -- |
| 505 8# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
8. Conclusion -- References -- Authors' biographies. |
| 506 1# - RESTRICTIONS ON ACCESS NOTE |
|---|
| Terms governing access |
Abstract freely available; full-text restricted to subscribers or individual document purchasers. |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Compendex |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
INSPEC |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google scholar |
| 510 0# - CITATION/REFERENCES NOTE |
|---|
| Name of source |
Google book search |
| 520 3# - SUMMARY, ETC. |
|---|
| Summary, etc. |
In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (<300K) to these innovatively configured device structures can enable the industry professionals to keep up with Moore's Law-based scaling curve conforming with ITRS projection of device performance outcome values. In this prospective review E-book, the authors have systematically reviewed the research results based on scaled device architectures, identified key bottlenecks to sustained scaling-based performance, and through original device simulation outcomes of conventional long channel MOSFET extracted the variation profile of threshold voltage as a function of substrate temperature which will be instrumental in reducing subthreshold leakage current in the temperature range 100K-300K. An exploitation methodology to regulate the die temperature to enable the efficient performance of a high-density VLSI circuit is also documented in order to make the lower substrate temperature operation of VLSI circuits and systems on chip process compatible. |
| 530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE |
|---|
| Additional physical form available note |
Also available in print. |
| 588 ## - SOURCE OF DESCRIPTION NOTE |
|---|
| Source of description note |
Title from PDF title page (viewed on February 19, 2016). |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Integrated circuits |
| General subdivision |
Very large scale integration. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Computer engineering. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Low temperature engineering. |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
threshold voltage |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
substrate temperature |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
Fermi potential |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
intrinsic carrier concentration |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
bulk potential |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
depletion charge |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
metal-to-semiconductor work function difference |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
flat-band voltage |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
subthreshold leakage current |
| 653 ## - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
thin-film microcoolers |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Alam, Shawon., |
| Relator term |
author. |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Alam, Mohaiminul., |
| Relator term |
author. |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
|---|
| Relationship information |
Print version: |
| International Standard Book Number |
9781627058544 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis digital library of engineering and computer science. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Synthesis lectures on emerging engineering technologies ; |
| Volume/sequential designation |
# 4. |
| International Standard Serial Number |
2381-1439 |
| 856 42 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Materials specified |
Abstract with links to resource |
| Uniform Resource Identifier |
http://ieeexplore.ieee.org/servlet/opac?bknumber=7416916 |
