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Dilute III-V Nitride Semiconductors and Material Systems (Record no. 509421)

000 -LEADER
fixed length control field 04793nam a22006015i 4500
001 - CONTROL NUMBER
control field 978-3-540-74529-7
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20161121231145.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 100301s2008 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783540745297
-- 978-3-540-74529-7
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-540-74529-7
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TA1750-1750.22
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC021000
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008080
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 620.11295
Edition number 23
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 620.11297
Edition number 23
245 10 - TITLE STATEMENT
Title Dilute III-V Nitride Semiconductors and Material Systems
Medium [electronic resource] :
Remainder of title Physics and Technology /
Statement of responsibility, etc. edited by Ayşe Erol.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Berlin, Heidelberg :
Name of producer, publisher, distributor, manufacturer Springer Berlin Heidelberg,
Date of production, publication, distribution, manufacture, or copyright notice 2008.
300 ## - PHYSICAL DESCRIPTION
Extent XXXII, 592 p.
Other physical details online resource.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
490 1# - SERIES STATEMENT
Series statement Materials Science,
International Standard Serial Number 0933-033X ;
Volume/sequential designation 105
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Energetic Beam Synthesis of Dilute Nitrides and Related Alloys -- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells -- Electronic Band Structure of Highly Mismatched Semiconductor Alloys -- Electronic Structure of GaNxAs1?x Under Pressure -- Experimental Studies of GaInNAs Conduction Band Structure -- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues -- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides -- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells -- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys -- The Hall Mobility in Dilute Nitrides -- Spin Dynamics in Dilute Nitride -- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs -- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates -- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP -- Doping, Electrical Properties and Solar Cell Application of GaInNAs -- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate -- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers -- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition -- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers -- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides -- Dilute Nitride Photodetector and Modulator Devices.
520 ## - SUMMARY, ETC.
Summary, etc. A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Materials science.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Solid state physics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Optics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Optoelectronics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Plasmons (Physics).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Spectroscopy.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Microscopy.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Engineering.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Optical materials.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electronic materials.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Materials Science.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Optical and Electronic Materials.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Solid State Physics.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Spectroscopy and Microscopy.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Engineering, general.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Optics, Optoelectronics, Plasmonics and Optical Devices.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Erol, Ayşe.
Relator term editor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9783540745280
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Materials Science,
International Standard Serial Number 0933-033X ;
Volume/sequential designation 105
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-540-74529-7
912 ## -
-- ZDB-2-CMS
Holdings
Withdrawn status Lost status Damaged status Not for loan Permanent Location Current Location Date acquired Barcode Date last seen Price effective from Koha item type
        PK Kelkar Library, IIT Kanpur PK Kelkar Library, IIT Kanpur 2016-11-21 EBK9708 2016-11-21 2016-11-21 E books

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