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Computational Materials Chemistry (Record no. 508216)

000 -LEADER
fixed length control field 03725nam a22004335i 4500
001 - CONTROL NUMBER
control field 978-1-4020-2117-6
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20161121231057.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 100301s2005 ne | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781402021176
-- 978-1-4020-2117-6
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/1-4020-2117-8
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TA401-492
072 #7 - SUBJECT CATEGORY CODE
Subject category code TGM
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC021000
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 620.11
Edition number 23
245 10 - TITLE STATEMENT
Title Computational Materials Chemistry
Medium [electronic resource] :
Remainder of title Methods and Applications /
Statement of responsibility, etc. edited by L.A. Curtiss, M.S. Gordon.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Dordrecht :
Name of producer, publisher, distributor, manufacturer Springer Netherlands,
Date of production, publication, distribution, manufacture, or copyright notice 2005.
300 ## - PHYSICAL DESCRIPTION
Extent IX, 372 p.
Other physical details online resource.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Using Quantum Calculations of NMR Properties to Elucidate Local and Mid-Range Structures in Amorphous Oxides, Nitrides and Aluminosilicates -- Molecular Modeling of Poly(Ethylene Oxide) Melts and Poly(Ethylene Oxide)-Based Polymer Electrolytes -- Nanostructure Formation and Relaxation in Metal(100) Homoepitaxial Thin Films: Atomistic and Continuum Modeling -- Theoretical Studies of Silicon Surface Reactions with Main Group Absorbates -- Quantum-Chemical Studies of Molecular Reactivity in Nanoporous Materials -- Theoretical Methods for Modeling Chemical Processes on Semiconductor Surfaces -- Theoretical Studies of Growth Reactions on Diamond Surfaces -- Charge Injection in Molecular Devices — Order Effects.
520 ## - SUMMARY, ETC.
Summary, etc. As a result of the advancements in algorithms and the huge increase in speed of computers over the past decade, electronic structure calculations have evolved into a valuable tool for characterizing surface species and for elucidating the pathways for their formation and reactivity. It is also now possible to calculate, including electric field effects, STM images for surface structures. To date the calculation of such images has been dominated by density functional methods, primarily because the computational cost of - curate wave-function based calculations using either realistic cluster or slab models would be prohibitive. DFT calculations have proven especially valuable for elucidating chemical processes on silicon and other semiconductor surfaces. However, it is also clear that some of the systems to which DFT methods have been applied have large non-dynamical correlation effects, which may not be properly handled by the current generation of Kohn-Sham-based density functionals. For example, our CASSCF calculations on the Si(001)/acetylene system reveal that at some geometries there is extensive 86 configuration mixing. This, in turn, could signal problems for DFT cal- lations on these systems. Some of these problem systems can be addressed using ONIOM or other “layering” methods, treating the primary region of interest with a CASMP2 or other multireference-based method, and treating the secondary region by a lower level of electronic structure theory or by use of a molecular mechanics method. ACKNOWLEDGEMENTS We wish to thank H. Jónsson, C. Sosa, D. Sorescu, P. Nachtigall, and T. -C.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Materials science.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Polymers.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Materials Science.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Materials Science, general.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Polymer Sciences.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Curtiss, L.A.
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Gordon, M.S.
Relator term editor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9781402017674
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/1-4020-2117-8
912 ## -
-- ZDB-2-CMS
Holdings
Withdrawn status Lost status Damaged status Not for loan Permanent Location Current Location Date acquired Barcode Date last seen Price effective from Koha item type
        PK Kelkar Library, IIT Kanpur PK Kelkar Library, IIT Kanpur 2016-11-21 EBK8503 2016-11-21 2016-11-21 E books

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