000 -LEADER |
fixed length control field |
04817nam a22005535i 4500 |
001 - CONTROL NUMBER |
control field |
978-0-387-24313-9 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
DE-He213 |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20161121231012.0 |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr nn 008mamaa |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
100301s2005 xxu| s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9780387243139 |
-- |
978-0-387-24313-9 |
024 7# - OTHER STANDARD IDENTIFIER |
Standard number or code |
10.1007/b105122 |
Source of number or code |
doi |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
TK7888.4 |
072 #7 - SUBJECT CATEGORY CODE |
Subject category code |
TJFC |
Source |
bicssc |
072 #7 - SUBJECT CATEGORY CODE |
Subject category code |
TEC008010 |
Source |
bisacsh |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
621.3815 |
Edition number |
23 |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Croon, Jeroen A. |
Relator term |
author. |
245 10 - TITLE STATEMENT |
Title |
Matching Properties of Deep Sub-Micron MOS Transistors |
Medium |
[electronic resource] / |
Statement of responsibility, etc. |
by Jeroen A. Croon, Willy Sansen, Herman E. Maes. |
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
Place of production, publication, distribution, manufacture |
Boston, MA : |
Name of producer, publisher, distributor, manufacturer |
Springer US, |
Date of production, publication, distribution, manufacture, or copyright notice |
2005. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
XII, 206 p. |
Other physical details |
online resource. |
336 ## - CONTENT TYPE |
Content type term |
text |
Content type code |
txt |
Source |
rdacontent |
337 ## - MEDIA TYPE |
Media type term |
computer |
Media type code |
c |
Source |
rdamedia |
338 ## - CARRIER TYPE |
Carrier type term |
online resource |
Carrier type code |
cr |
Source |
rdacarrier |
347 ## - DIGITAL FILE CHARACTERISTICS |
File type |
text file |
Encoding format |
PDF |
Source |
rda |
490 1# - SERIES STATEMENT |
Series statement |
The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing, |
International Standard Serial Number |
0893-3405 ; |
Volume/sequential designation |
851 |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book -- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions -- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions -- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions -- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di�erent CMOS technologies. Alternative device concepts. Conclusions -- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions -- Conclusions, Future Work and Outlook. Conclusions. Future work -- Outlook. |
520 ## - SUMMARY, ETC. |
Summary, etc. |
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET. |
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Engineering. |
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Physics. |
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Electrical engineering. |
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Electronics. |
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Microelectronics. |
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Electronic circuits.1 |
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Engineering.2 |
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Circuits and Systems.2 |
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Physics, general.2 |
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Electronics and Microelectronics, Instrumentation.2 |
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Engineering, general.2 |
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Electrical Engineering.1 |
700 ## - ADDED ENTRY--PERSONAL NAME |
Personal name |
Sansen, Willy. |
Relator term |
author.1 |
700 ## - ADDED ENTRY--PERSONAL NAME |
Personal name |
Maes, Herman E. |
Relator term |
author.2 |
710 ## - ADDED ENTRY--CORPORATE NAME |
Corporate name or jurisdiction name as entry element |
SpringerLink (Online service)0 |
773 ## - HOST ITEM ENTRY |
Title |
Springer eBooks0 |
776 8# - ADDITIONAL PHYSICAL FORM ENTRY |
Relationship information |
Printed edition: |
International Standard Book Number |
9780387243146 |
830 0# - SERIES ADDED ENTRY--UNIFORM TITLE |
Uniform title |
The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing, |
International Standard Serial Number |
0893-3405 ; |
Volume/sequential designation |
8514 |
856 0# - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
http://dx.doi.org/10.1007/b105122 |
912 ## - |
-- |
ZDB-2-ENG |