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Matching Properties of Deep Sub-Micron MOS Transistors (Record no. 507110)

000 -LEADER
fixed length control field 04817nam a22005535i 4500
001 - CONTROL NUMBER
control field 978-0-387-24313-9
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20161121231012.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 100301s2005 xxu| s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780387243139
-- 978-0-387-24313-9
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/b105122
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7888.4
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFC
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008010
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Croon, Jeroen A.
Relator term author.
245 10 - TITLE STATEMENT
Title Matching Properties of Deep Sub-Micron MOS Transistors
Medium [electronic resource] /
Statement of responsibility, etc. by Jeroen A. Croon, Willy Sansen, Herman E. Maes.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Boston, MA :
Name of producer, publisher, distributor, manufacturer Springer US,
Date of production, publication, distribution, manufacture, or copyright notice 2005.
300 ## - PHYSICAL DESCRIPTION
Extent XII, 206 p.
Other physical details online resource.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
490 1# - SERIES STATEMENT
Series statement The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing,
International Standard Serial Number 0893-3405 ;
Volume/sequential designation 851
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book -- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions -- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions -- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions -- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di�erent CMOS technologies. Alternative device concepts. Conclusions -- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions -- Conclusions, Future Work and Outlook. Conclusions. Future work -- Outlook.
520 ## - SUMMARY, ETC.
Summary, etc. Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Engineering.
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Physics.
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electrical engineering.
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electronics.
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Microelectronics.
650 0# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electronic circuits.1
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Engineering.2
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Circuits and Systems.2
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Physics, general.2
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electronics and Microelectronics, Instrumentation.2
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Engineering, general.2
650 4# - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electrical Engineering.1
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Sansen, Willy.
Relator term author.1
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Maes, Herman E.
Relator term author.2
710 ## - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)0
773 ## - HOST ITEM ENTRY
Title Springer eBooks0
776 8# - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9780387243146
830 0# - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing,
International Standard Serial Number 0893-3405 ;
Volume/sequential designation 8514
856 0# - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/b105122
912 ## -
-- ZDB-2-ENG
Holdings
Withdrawn status Lost status Damaged status Not for loan Permanent Location Current Location Date acquired Barcode Date last seen Price effective from Koha item type
        PK Kelkar Library, IIT Kanpur PK Kelkar Library, IIT Kanpur 2016-11-21 EBK7397 2016-11-21 2016-11-21 E books

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